Researchers from MIT and the University of Colorado have fabricated a 3-D transistor that's less than half the size of today's smallest commercial models. To do so, they developed a novel microfabrication technique that modifies ...
Nanophysics
Dec 10, 2018
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549
(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create faster ...
Electronics & Semiconductors
Nov 10, 2009
3
0
University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers ...
Electronics & Semiconductors
Nov 26, 2012
3
0
(PhysOrg.com) -- On May 4, 2011, Intel Corporation announced what it called the most radical shift in semiconductor technology in 50 years. A new three-dimensional transistor design will enable the production of integrated-circuit ...
Electronics & Semiconductors
May 25, 2011
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0
At this week's VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions.
Electronics & Semiconductors
Jun 17, 2015
0
31
Renesas Electronics today announced the development of a new circuit technology for automotive information SoCs (system on chips) at 16 nanometer (nm) and beyond. Using this new circuit technology, Renesas tested the prototype ...
Electronics & Semiconductors
Dec 19, 2014
0
0
