Engineers produce smallest 3-D transistor yet

Researchers from MIT and the University of Colorado have fabricated a 3-D transistor that's less than half the size of today's smallest commercial models. To do so, they developed a novel microfabrication technique that modifies ...

Successors to FinFET for 7nm and beyond

At this week's VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions.

Spanish scientists design a revolutionary data storage device

University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers ...

Radical new Intel transistor based on UC Berkeley's FinFET

(PhysOrg.com) -- On May 4, 2011, Intel Corporation announced what it called the most radical shift in semiconductor technology in 50 years. A new three-dimensional transistor design will enable the production of integrated-circuit ...