News tagged with finfet
Radical new Intel transistor based on UC Berkeley's FinFET
(PhysOrg.com) -- On May 4, 2011, Intel Corporation announced what it called the most radical shift in semiconductor technology in 50 years. A new three-dimensional transistor design will enable the product ...
May 25, 2011 |
5 / 5 (2) |
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New 'finFETs' promising for smaller transistors, more powerful chips
(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers ...
Nov 10, 2009 |
4.9 / 5 (15) |
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Search results for finfet
Imec releases industry’s first 14nm process development kit
Imec today announces that it has released an early-version PDK (process development kit) for 14nm logic chips. This PDK is the industry’s first to address the 14nm technology node. It targets the introduction of a number ...
Mar 07, 2012 |
3 / 5 (5) |
1
Fujitsu and SuVolta demonstrate ultra-low-voltage operation of SRAM down to 0.4V
Fujitsu Semiconductor Limited and SuVolta, Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating ...
Dec 07, 2011 |
5 / 5 (1) |
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New 3-D transistors promising future chips, lighter laptops
(PhysOrg.com) -- Researchers from Purdue and Harvard universities have created a new type of transistor made from a material that could replace silicon and have a 3-D structure instead of conventional flat computer chips.
Dec 06, 2011 |
4.8 / 5 (13) |
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It's a wrap! Nanowire opens gate to new devices
(PhysOrg.com) -- In an interesting feat of nanoscale engineering, researchers at Lund University in Sweden and the University of New South Wales have made the first nanowire transistor featuring a concentric ...
Apr 07, 2011 |
4.3 / 5 (10) |
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45-nanometer chips for ultra-fast WiFi
(PhysOrg.com) -- Powerful new radio technologies that promise blisteringly fast WiFi have been given a boost by a team of European researchers’ cutting-edge work on miniscule microchips.
Jul 29, 2009 |
5 / 5 (7) |
1
Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate
Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world’s smallest functional SRAM cell that ...
Dec 17, 2008 |
1 / 5 (1) |
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IMEC reports major progress in EUV
IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML’s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, ...
Jul 14, 2008 |
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IMEC increases performance of high-k metal gate planar CMOS and FinFETs
At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates ...
Dec 11, 2007 |
3.8 / 5 (5) |
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IMEC advancing state-of-the-art in FinFETs
At this week’s VLSI Symposium, IMEC presents significant progress in the manufacturability, circuit performance and reliability of FinFETs. The results advance FinFET process technology towards being a candidate ...
Jun 13, 2007 |
5 / 5 (3) |
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S.Korea develop the smallest transistors
South Korean scientists and the national institute of technology have developed a 3-nanometer-wide transistor, the smallest of its kind in the world.
Mar 14, 2006 |
4.1 / 5 (14) |
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List of search results for finfet
