News tagged with ferroelectric random access memory
New Fujitsu V series FRAMs deliver optimal design flexibility
Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...
Mar 05, 2012 |
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Fujitsu introduces new FRAM product series with extended voltage range
Fujitsu Semiconductor Europe today introduces a new FRAM (Ferroelectric Random Access Memory) product series with an extended voltage range of 3.0V – 5.5V, offering significantly greater design flexibility ...
Feb 14, 2012 |
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Scientists watch a next-generation ferroelectric memory bit switch in real time
For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.
Nov 17, 2011 |
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Toshiba Develops World's Highest-Bandwidth, Highest Density Non-volatile RAM
Toshiba Corporation today announced the prototype of a new FeRAM -- Ferroelectric Random Access Memory -- that redefines industry benchmarks for density and operating speed. The new chip realizes storage of ...
Feb 09, 2009 |
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Search results for ferroelectric random access memory
An electrical switch for magnetic current
(PhysOrg.com) -- A new mechanism will make it possible to switch data storage in the future. Researchers at the Max Planck Institute of Microstructure Physics in Halle use a short electric pulse to change ...
Mar 01, 2012 |
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New 'FeTRAM' is promising computer memory technology
(PhysOrg.com) -- Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.
Sep 27, 2011 |
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Ferroelectrics could pave way for ultra-low power computing
Engineers at the University of California, Berkeley, have shown that it is possible to reduce the minimum voltage necessary to store charge in a capacitor, an achievement that could reduce the power draw and ...
Sep 12, 2011 |
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Heated AFM tip allows direct fabrication of ferroelectric nanostructures on plastic
Using a technique known as thermochemical nanolithography (TCNL), researchers have developed a new way to fabricate nanometer-scale ferroelectric structures directly on flexible plastic substrates that would ...
Jul 18, 2011 |
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Fujitsu launches new SPI FRAMs in 0.18µm technology
Fujitsu Semiconductor Europe is sampling customers with the new SPI FRAMs based on its 0.18µm technology. With this step, Fujitsu approaches the end of the migration process from 0.35 to 0.18µm technology ...
Jun 30, 2011 |
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Half-a-loaf method can improve magnetic memories
Chinese scientists have shown that magnetic memory, logic and sensor cells can be made faster and more energy efficient by using an electric, not magnetic, field to flip the magnetization of the sensing layer only about halfway, ...
Aug 24, 2010 |
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What Comes After Hard Drives?
(PhysOrg.com) -- The ability to store and retrieve data is an important component of today's computers, as well as other modern electronic devices such as cell phones, video game consoles, and camcorders. ...
Oct 23, 2009 |
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Low Temperature Laser Processing Solves a Problem in Smart Materials Manufacturing
(PhysOrg.com) -- If researchers could integrate some of the active materials, such as perovskites, that have been developed in recent years for microsensor, actuator, and transducer applications directly onto ...
Dec 18, 2008 |
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Shimmering ferroelectric domains
Ferroelectric materials are named after ferromagnetic ones because they behave in a similar way. The main difference: these materials are not magnetic, but permanently electrically polarized. They have great ...
Jul 18, 2008 |
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Remembering the future
As electronics designers cram more and more components onto each chip, current technologies for making random-access memory (RAM) are running out of room. European researchers have a strong position in a new ...
Nov 15, 2007 |
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List of search results for ferroelectric random access memory
