News tagged with ferroelectric memories
An unlikely route to ferroelectricity
(Phys.org) -- Ferroelectricity, which was first observed in the 1940s, is an interesting phenomenon involving the spontaneous (non-induced) formation of charge polarization (separation of charge) in certain ...
May 18, 2012 |
4.3 / 5 (4) |
7
|
New Fujitsu V series FRAMs deliver optimal design flexibility
Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...
Mar 05, 2012 |
not rated yet |
0
Fujitsu introduces new FRAM product series with extended voltage range
Fujitsu Semiconductor Europe today introduces a new FRAM (Ferroelectric Random Access Memory) product series with an extended voltage range of 3.0V – 5.5V, offering significantly greater design flexibility ...
Feb 14, 2012 |
not rated yet |
0
Ferroelectric switching discovered for first time in soft biological tissue
The heart's inner workings are mysterious, perhaps even more so with a new finding. Engineers at the University of Washington have discovered an electrical property in arteries not seen before in mammalian ...
Jan 30, 2012 |
5 / 5 (2) |
2
|
Researchers demonstrate rare combination of electric and magnetic properties in strontium barium manganite
An electric field can displace the cloud of electrons surrounding each atom of a solid. In an effect known as polarization, the cloud centers move away slightly from the positively charged nuclei, which radically ...
Jan 27, 2012 |
5 / 5 (3) |
1
Scientists watch a next-generation ferroelectric memory bit switch in real time
For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.
Nov 17, 2011 |
5 / 5 (3) |
0
|
Heated AFM tip allows direct fabrication of ferroelectric nanostructures on plastic
Using a technique known as thermochemical nanolithography (TCNL), researchers have developed a new way to fabricate nanometer-scale ferroelectric structures directly on flexible plastic substrates that would ...
Jul 18, 2011 |
5 / 5 (5) |
1
|
Conducting ferroelectrics may be key to new electronic memory
(PhysOrg.com) -- Novel properties of ferroelectric materials discovered at the Department of Energy's Oak Ridge National Laboratory are moving scientists one step closer to realizing a new paradigm of electronic memory storage.
Apr 25, 2011 |
4.7 / 5 (3) |
1
|
Data storage takes an electric turn
(PhysOrg.com) -- German scientists from the Forschungszentrum Julich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In ...
Mar 29, 2011 |
4.1 / 5 (7) |
2
|
Small and stable ferroelectric domains
Researchers are one step closer to figuring out a way to make nano-sized ferroelectric domains more stable, reports a new study in journal Science.
Mar 28, 2011 |
3.5 / 5 (2) |
1
Fundamental discovery could lead to better memory chips
(PhysOrg.com) -- Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage ...
Mar 15, 2011 |
5 / 5 (2) |
0
|
World record data density for ferroelectric recording
Scientists at Tohoku University in Japan have recorded data at a density of 4 trillion bits per square inch, which is a world record for the experimental "ferroelectric" data storage method. As described the journal Applied Ph ...
Nanotechnology / Nanomaterials
Aug 17, 2010 |
4 / 5 (12) |
5
|
Discovery could help electronics industry enter new phase
Electronic devices of the future could be smaller, faster, more powerful and consume less energy because of a discovery by researchers at the Department of Energy's Oak Ridge National Laboratory.
Jun 17, 2009 |
4.7 / 5 (10) |
0
Vise Squad: Putting the Squeeze on a Crystal Leads to Novel Electronics
(PhysOrg.com) -- A clever materials science technique that uses a silicon crystal as a sort of nanoscale vise to squeeze another crystal into a more useful shape may launch a new class of electronic devices ...
May 06, 2009 |
3.5 / 5 (4) |
0
Putting the squeeze on an old material could lead to 'instant on' electronic memory
(PhysOrg.com) -- The technology of storing electronic information - from old cassette tapes to shiny laptop computers - has been a major force in the electronics industry for decades.
Apr 16, 2009 |
4.7 / 5 (12) |
1
