News tagged with breakdown voltages
Fujitsu develops technology to manufacture power-supply transistors on nearly any flat-surface material
Fujitsu Laboratories announced the development of a technology that enables the manufacture of power-supply transistors on nearly any flat surface, including glass, plastic, or copper. High breakdown-voltage ...
Dec 09, 2010 |
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Panasonic develops gallium nitride (GaN) power transistor on silicon with blocking-voltage-boosting structure
Panasonic today announced the development of a new technique to drastically increase the blocking voltage of Gallium Nitride (GaN) -based power switching transistor on silicon (Si) substrates. The blocking ...
Dec 08, 2010 |
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Panasonic Develops High Power Gallium Nitride Transistor for Long-distance Millimeter-Wave Communication
Panasonic today announced the development of a high power Gallium Nitride (GaN) transistor for long-distance communication at millimeter-wave frequencies. A 25GHz wireless transceiver is fabricated using the ...
Jul 23, 2010 |
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Fujitsu Develops Gallium-Nitride HEMT Amplifier Featuring World's Highest Output in the C-Ku Band
Fujitsu today announced the development of an amplifier based on gallium-nitride (GaN) high electron mobility transistor (HEMT) technology, which features an output of 12.9W - more than twice the output of ...
May 28, 2010 |
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New nanoscale electrical phenomenon discovered
At the scale of the very small, physics can get peculiar. A University of Michigan biomedical engineering professor has discovered a new instance of such a nanoscale phenomenon -- one that could lead to faster, less expensive ...
May 18, 2010 |
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Gallium nitride transistor could replace silicon
(PhysOrg.com) -- A Cornell researcher has created an extremely efficient transistor made from gallium nitride, which may soon replace silicon as king of semiconductors for power applications.
Dec 08, 2009 |
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