Search results for strained silicon
New nanostructure for batteries keeps going and going
(Phys.org) -- For more than a decade, scientists have tried to improve lithium-based batteries by replacing the graphite in one terminal with silicon, which can store 10 times more charge. But after just a ...
May 11, 2012 |
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New vacuum calibration system: Better, faster, and cheaper
In the vacuum business, less is more—except when it comes to accuracy. Industries that depend on high-quality, carefully monitored vacuum for sensitive processes such as microchip fabrication, as well ...
May 09, 2012 |
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Graphene lenses: 2-D electron shepherds
Researchers discover that a deformed layer of graphene can focus electrons similar to the way an optical lens bends light.
Apr 18, 2012 |
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New 'electronic skin' patches monitor health wirelessly
Like the colorful temporary tattoos that children stick to their arms for fun, people may one day put thin "electronic skin" patches onto their arms to wirelessly diagnose health problems or deliver treatments. A scientis ...
Mar 27, 2012 |
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Straintronics: Engineers create piezoelectric graphene
In what became known as the 'Scotch tape technique," researchers first extracted graphene with a piece of adhesive in 2004. Graphene is a single layer of carbon atoms arranged in a honeycomb, hexagonal pattern. ...
Nanotechnology / Nanomaterials
Mar 16, 2012 |
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Transistors promise more powerful logic, more logical power
Broadly speaking, the two major areas of research at MIT’s Microsystems Technology Laboratory (MTL) are electronics — transistors in particular — and microelectromechanical systems, or MEMS ...
Mar 07, 2012 |
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Nanowires made of 'strained silicon' show how to keep increases in computer power coming
(PhysOrg.com) -- Computers keep getting more powerful because silicon transistors keep getting smaller. But that miniaturization can't continue much further without a change to the transistors' design, which ...
Jan 06, 2010 |
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Mapping deformation in buried semiconductor structures using the hard X-Ray nanoprobe
(PhysOrg.com) -- Scientists from IBM's T. J. Watson Research Center and Columbia University, working with the X-Ray Microscopy Group, have mapped rotation and strain fields across a silicon-on-insulator (SOI) ...
May 13, 2011 |
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Biosensors: A handy kit
(PhysOrg.com) -- A silicon-based microfluidic chip that distinguishes different viral strains shows potential for the quick on-site diagnosis of infectious diseases.
Apr 14, 2011 |
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Tension in the nanoworld: Infrared light visualizes nanoscale strain fields
(PhysOrg.com) -- A joint team of researchers at CIC nanoGUNE (San Sebastian, Spain) and the Max Planck Institutes of Biochemistry and Plasma Physics (Munich, Germany) report the non-invasive and nanoscale ...
Jan 12, 2009 |
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Stretching silicon: A new method to measure how strain affects semiconductors
(PhysOrg.com) -- University of Wisconsin-Madison engineers and physicists have developed a method of measuring how strain affects thin films of silicon that could lay the foundation for faster flexible electronics.
Nov 03, 2008 |
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Strained silicon carries light for cheaper commercial electronics
By physically compressing a silicon waveguide – and thus allowing variations in the way light travels through the material – scientists have discovered a key to creating a silicon electro-optic modulator. This ...
May 23, 2006 |
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Applied Materials and AmberWave Collaborate to Deliver 300mm Strained Silicon Technology
Applied Materials, Inc. has entered into an agreement with AmberWave Systems Corp. to license AmberWave's strained silicon intellectual property (IP) for Applied's use on its benchmark Applied Centura RP Epi system. Using ...
Dec 15, 2004 |
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AMD, IBM announce breakthrough strained silicon transistor
AMD and IBM today announced that they have developed a new and unique strained silicon transistor technology aimed at improving processor performance and power efficiency. The breakthrough process results in up to a 24 percent tr ...
Dec 13, 2004 |
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SiGen Granted Key Strained-Silicon Substrate Patent
Silicon Genesis Corporation (SiGen) announced today that it has received a key patent in the area of fabricating strained silicon and silicon-on-insulator (SOI) substrates using a layer transfer process used in next-generation high-speed and low- ...
Oct 04, 2004 |
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