Scientists at Tokyo Institute of Technology (Tokyo Tech) report a new material combination that sets the stage for magnetic random access memory based on spin, an intrinsic property of electrons. The innovation could outperform ...
University of Tokyo researchers have created an electronic component that demonstrates functions and abilities important to future generations of computational logic and memory devices. It is between one and two orders of ...
In the future, ultrahigh-speed spintronics will require ultrafast coherent magnetization reversal within a picosecond—one-trillionth of a second. Spintronics centers on an electron's spin and magnetic moment in solid-state ...
"Spintronics" holds promise for new types of devices for information processing and data storage, with ones and zeros being stored in the spin state of electrons as well as their electric charge. Such devices could be faster ...
More, faster, better, cheaper. These are the demands of our device-happy and data-centered world. Meeting these demands requires technologies for processing and storing information. Now, a significant obstacle to the development ...
University of California, Davis, researchers for the first time have looked inside gallium manganese arsenide, a type of material known as a "dilute magnetic semiconductor" that could open up an entirely new class of faster, ...
(Phys.org)—Spintronic technology, in which data is processed on the basis of electron "spin" rather than charge, promises to revolutionize the computing industry with smaller, faster and more energy efficient data storage ...
A long-standing controversy regarding the semiconductor gallium manganese arsenide, one of the most promising materials for spintronic technology, looks to have been resolved. Researchers with the Lawrence Berkeley National ...
Dilute magnetic semiconductors (DMS) have recently been a major focus of magnetic semiconductor research. A laboratory from the University of Science and Technology of China explored the feasibility of doping manganese (Mn) ...
(PhysOrg.com) -- The Fermi level position and band structure of gallium manganese arsenide has been determined for the first time, shedding light on the precise mechanism behind ferromagnetism in the material.
