Search results for SRAM
TSMC Achieves 28nm SRAM Yield Breakthrough
Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.
Aug 24, 2009 |
5 / 5 (2) |
0
Fujitsu and SuVolta demonstrate ultra-low-voltage operation of SRAM down to 0.4V
Fujitsu Semiconductor Limited and SuVolta, Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating ...
Dec 07, 2011 |
5 / 5 (1) |
0
Toshiba develops circuit techniques for embedded SRAM operating at 0.5V-1.0V
Toshiba Corporation today announced it has developed circuit techniques for embedded SRAM that operate in a wide supply voltage range, from 0.5V to 1.0V, that effectively contribute to lower power consumption by electronic ...
Nov 16, 2011 |
5 / 5 (1) |
1
Toshiba Develops SRAM Circuit Technique that Secures Low Voltage Operation of System LSI
Toshiba Corporation today announced that it has developed a breakthrough technology that achieves low voltage operation of System LSI, opening the way to reduced power consumption in digital products. The ...
Feb 08, 2010 |
3 / 5 (3) |
0
Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate
Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world’s smallest functional SRAM cell that ...
Dec 17, 2008 |
1 / 5 (1) |
0
UMC Announces Industry's First 28nm SRAMs
UMC, a leading global semiconductor foundry, today announced that it has manufactured the foundry industry's first fully functional 28nm SRAM chips. The chips are based on UMC's independently developed low-leakage (LL) process ...
Oct 27, 2008 |
4.3 / 5 (3) |
0
Researchers Build World's Smallest SRAM Memory Cell
(PhysOrg.com) -- IBM and its development partners -- AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) -- today announced the first working static random access memory ...
Aug 18, 2008 |
4.4 / 5 (24) |
3
NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHz
NEC Corporation today announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed.
Nov 30, 2007 |
5 / 5 (7) |
0
Renesas, Matsushita Develop Technique for Stablizing Operation of 45nm On-Chip SRAM
Renesas Technology and Matsushita Electric Industrial today announced the development of a technique that achieves stable operation with 45nm process generation bulk CMOS for SRAM (Static Random Access Memory) ...
Feb 13, 2007 |
4 / 5 (1) |
0
ISSI acquires Alliance SRAM chip line
Integrated Silicon Solution Inc. said Thursday it had acquired the complete SRAM product line produced by Alliance Semiconductor.
Jul 06, 2006 |
1 / 5 (4) |
0
Nanotech SRAM for battery devices unveiled
Researchers have unveiled a SRAM test device for battery-powered devices with the lowest voltage requirements ever produced.
Feb 09, 2006 |
3.6 / 5 (11) |
0
Ultra-Dense SRAM cell in 45-nm Low-Cost, Low-Power Conventional Bulk CMOS Technology
The Crolles2 Alliance today presented a paper* describing the creation, under production conditions, of six-transistor SRAM-bit cells with an area less than 0.25 square microns – half the size of earlier solutions – using ...
Jun 15, 2005 |
2 / 5 (1) |
0
SRAM technology with 0.8V operation voltage
Hitachi, Ltd.and Renesas Technology Corp. announced that they have developed low-voltage embedded SRAM technology for SoC's (system-on-a-chip) beyond the 90-nm process node. Using new circuit techniques, the power lines of ...
Feb 17, 2005 |
2.1 / 5 (7) |
0
IMEC reports record in tall triple-gate device SRAM cell for 45nm node
At today’s IEEE International Electron Devices Meeting in San Francisco, IMEC, Europe’s largest independent nanoeelctronics and nanotechnology research center, announced that it had achieved the smallest triple-gate device SRA ...
Dec 13, 2004 |
not rated yet |
0
IBM Unveils World's Smallest SRAM Memory Cell
IBM today announced it has built a critical component for a high-speed computer memory that is about ten times smaller than those currently available, potentially enabling a major system performance boost for critical business ...
Dec 06, 2004 |
2.6 / 5 (5) |
0
