Search results for NAND
TDK launches eSSD series: Single chip Solid State Drives (SSD)
TDK Corporation has developed the eSSD series, a single chip 3Gbps SSD with serial ATA interface that uses multi-chip technology to integrate the TDK SSD controller GBDriver RS3 with NAND type flash memory ...
Mar 23, 2012 |
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Intel announces Solid-State Drive (SSD) 330 series
Intel Corporation announced today the Intel Solid-State Drive 330 Series (Intel SSD 330 Series), a SATA 6 gigabit-per-second (Gb/s) solid-state drive (SSD) that gives consumers a more affordable entry into the accelerated ...
Apr 17, 2012 |
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Intel introduces 400GB and 800GB Solid-State Drive 910 series for data centers
Intel Corporation introduced last week the Intel Solid-State Drive 910 Series (Intel SSD 910 Series), a super high-performing SSD to address rigorous data center storage demands driven by cloud computing, ...
Apr 16, 2012 |
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Samsung offers Ultra High Speed-1 MicroSD cards for advanced LTE smartphones, tablets
Samsung Electronics today announced that it is now mass producing Ultra High Speed1 (UHS-1) interface microSD cards that support the highest performance levels required on advanced LTE (Long Term Evolution) ...
Apr 06, 2012 |
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Samsung offers industry's first 64-gigabit MLC NAND flash, using toggle DDR 2.0 interface
Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit ...
May 13, 2011 |
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Toshiba launches 19nm process NAND flash memory
(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...
Apr 21, 2011 |
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Intel, Micron sample 20nm NAND flash
Intel and Micron Technology today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND ...
Apr 15, 2011 |
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Toshiba introduces new embedded-NAND flash memory in 24nm process
Toshiba Corporation today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAN," which integrate robust error management ...
Apr 06, 2011 |
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Micron unveils innovative flash memory devices that extend the life of NAND
Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the ...
Dec 02, 2010 |
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Samsung now producing 20nm-class, 64-gigabit 3-bit NAND flash memory
Samsung Electronics announced today the industrys first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The highly advanced new chip can ...
Oct 13, 2010 |
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Elpida and Spansion develop 4-Gigabit NAND flash memory
Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping ...
Sep 02, 2010 |
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Samsung, Toshiba to Support New Standardized NAND Specification for High-performance Applications
Samsung Electronics and Toshiba today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second ...
Jul 22, 2010 |
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Samsung Introduces High-speed 512GB SSD Utilizing New Toggle-mode DDR NAND Memory
Samsung Electronics today introduced the first solid state drive (SSD) utilizing high-performance toggle-mode DDR NAND. The new 512 gigabyte (GB) SSD provides electronic data processing application designers with advanced ...
Jun 17, 2010 |
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Toshiba Launches 128GB Embedded NAND Flash Memory Module
(PhysOrg.com) -- Toshiba announced today the first ever 128GB embedded flash memory chip using 32 nanometer processes. The entire design is less than 0.06 inches thick.
Samsung Intros Industry’s First Higher-performing 20nm-class NAND Flash Memory
Samsung Electronics announced the industry's first production of 20 nanometer class NAND chips for use in Secure Digital (SD) memory cards and embedded memory solutions. Based on this cutting-edge technology, ...
Apr 20, 2010 |
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