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Soitec, ATDF to Develop Multi-Gate Field Effect Transistors (MuGFETs) for 45-nm Technology and Beyond

In an effort to accelerate the development of new-generation transistors, Soitec, today announced its participation as the SOI substrate supplier in a development program led by ATDF -- Advanced Technology Development Facility ...

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created Jan 05, 2005 | popularity not rated yet | comments 0

Success of 45 nm Node Technology for MuGFET, a Next-Generation Transistor

ATDF, Inc. with assistance from HPL Technologies, Inc. of San Jose, has successfully demonstrated process capability at the 45 nm technology node for a multi-gate field effect transistor (MuGFET), an advanced semiconductor ...

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created Aug 30, 2004 | popularity not rated yet | comments 0

IMEC concludes FEOL installation and enters into alliances for copper/low-k interconnect technology

IMEC successfully concludes installation of front-end-of-line (FEOL) tools with processing of first pathfinder lots. Strategic agreements with leading equipment manufacturers Applied Materials, Inc., ASM International and ...

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created Jul 11, 2005 | popularity not rated yet | comments 0

IMEC to create solutions for sub-45nm CMOS scaling

Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances ...

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created Jun 17, 2005 | popularity 4 / 5 (2) | comments 0

SEMATECH Identifies Top Technical Challenges for 2006; Adds Transistor Scaling

SEMATECH today announced its Top Technical Challenges for 2006, continuing to underscore advanced gate stack, 193 nm immersion and EUV lithography, mask infrastructure, and low-k dielectrics with process compatibility. Consortium ...

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created Apr 20, 2005 | popularity 1.5 / 5 (2) | comments 0

IMEC reports record in tall triple-gate device SRAM cell for 45nm node

At today’s IEEE International Electron Devices Meeting in San Francisco, IMEC, Europe’s largest independent nanoeelctronics and nanotechnology research center, announced that it had achieved the smallest triple-gate device SRA ...

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created Dec 13, 2004 | popularity not rated yet | comments 0