Search results for MOSFET
Toshiba announces next-generation superjunction technology for power MOSFETs
Toshiba America Electronic Components (TAEC) today announced its DTMOS-IV process, a new-generation of superjunction (SJ) technology for power MOSFETs. Products based on the DTMOS-IV technology will make ...
May 10, 2012 |
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Toshiba expands family of high-speed, low-voltage MOSFETs with new 60V and 120V devices
Toshiba America Electronic Components (TAEC) today announced that it has expanded its family of low-voltage, high-speed MOSFETs with new, ultra-efficient 60V and 120V devices that will save space and reduce ...
May 10, 2012 |
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Toshiba announces family of ultra-efficient, high-speed, low voltage MOSFETs
Toshiba today announced a new family of ultra-high-efficiency, high-speed MOSFETs that deliver significant improvements in trade-off characteristics between low on resistance (RDS(ON)) and low input capacitanc ...
Feb 06, 2012 |
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Toshiba develops essential technology for spintronics-based MOS field-effect transistor
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Dec 09, 2009 |
4.6 / 5 (12) |
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NXP announces world's smallest high-performance MOSFET
NXP Semiconductors, the independent company founded by Philips, today announced a new range of small signal MOSFET devices housed in one of the world’s smallest packages, the SOT883. Boasting an ultra-small 1.0 x 0.6 mm footprint, ...
Feb 25, 2008 |
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World's first MOSFETs with epitaxial Gd2O3
Researchers at AMICA and Technical University of Darmstadt have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material and bulk silicon with a crystalline gadolinium oxide ...
Feb 03, 2006 |
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Freescale creates first commercially viable GaAs MOSFET device
Freescale Semiconductor has developed the industry's first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect ...
Jan 30, 2006 |
4.2 / 5 (15) |
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UMC Develops Ultimate Spacer Process to Enhance MOSFET Device Performance for 65nm and Beyond
UMC today announced that its Central Research and Development Division (CRD) has successfully developed an Ultimate Spacer Process (USP) technology that simultaneously enhances NMOS and PMOS device performance. Devices fabricated ...
Dec 07, 2005 |
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World's first SOI MOSFET with crystalline Gd2O3
Researchers at AMICA have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material with a crystalline gadolinium oxide (Gd2O3) gate dielectric.
Physics /
Nov 28, 2005 |
3.3 / 5 (3) |
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Renesas Releases DC/DC Converter Power MOSFET Chip Set Achieving Industry's Highest Power Efficiency of 90 percent
Renesas Technology Corp. today announced a power MOSFET chip set, comprising a high-side(*1) RJK0305DPB and low-side(*1) RJK0301DPB, for DC-DC converters used in servers, notebook PCs, communication devices, and similar products.Sample ...
Apr 13, 2005 |
2.7 / 5 (3) |
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High Voltage DTMOS Power MOSFET Using A Super Junction Structure To Reduce Power Consumption
Continuing its leadership role in developing innovative power semiconductors, Toshiba America Electronic Components, Inc. (TAEC) and its parent Toshiba Corp. announced a new power MOSFET called DTMOS, that employs a new super ...
Mar 29, 2005 |
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New Low Voltage Trench MOSFETs Improve Power Circuit Efficiency and Battery-Life
Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These devices reduce resistance between drain ...
Jan 28, 2005 |
1.5 / 5 (2) |
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MOSFET Technology with Zero-Voltage and Zero-Current Transitions
STMicroelectronics has introduced an n-channel MOSFET for use in HID lamps, high-end ballasts and switch-mode power supplies that use zero-voltage and zero-current transitions.The STx9NK60ZD is the first dev ...
Sep 03, 2004 |
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Philips introduces High Performance Automotive TrenchMOS MOSFETs in LFPAK
New devices offer enhanced thermal performance in compact packaging Expanding its portfolio of automotive power solutions, Royal Philips Electronics today announced the availability of its High Performance Automotive (H ...
Aug 30, 2004 |
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Toshiba Unveils New Smart Thin Package for Power MOSFETs With Industry's Smallest Mount Area Per MilliOhm of ON-Resistan
First MOSFETs in Smart Thin Package Series Offer Increased Power Dissipation, Very Low ON-Resistance Construction to Improve Lithium Ion Battery Performance Expanding innovative advanced packaging for its power semiconduct ...
Jul 29, 2004 |
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