Search results for 45 nm
LIVE: Facebook goes public
(AP) -- It's Facebook's big day. The site, which was born in a dorm room eight years ago and has grown into a worldwide network of almost a billion people, is making the most talked-about stock market debut ...
May 18, 2012 |
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Asia helps drive Facebook's 1-billion goal
As Facebook nears saturation levels in some Western countries, Asian users are helping drive the social-networking leader's march on the 1-billion-user milestone and beyond.
May 16, 2012 |
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Microscope looks into cells of living fish
Microscopes provide valuable insights in the structure and dynamics of cells, in particular when the latter remain in their natural environment. However, this is very difficult especially for higher organisms. ...
May 16, 2012 |
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HELIOS makes silicon breakthrough
Researchers in Europe have succeeded in presenting an integrated tuneable transmitter on silicon - the first time this has ever happened. This results are an outcome of the HELIOS ('Photonics electronics functional ...
Mar 30, 2012 |
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Solutions Emerging for Wafer Cleaning at 45 nm and Beyond
Potential solutions are starting to emerge for preparing wafers for manufacturing at and beyond the 45 nm technology generation, technologists indicated at a recent industry meeting organized by SEMATECH.
May 21, 2007 |
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Sematech Advances Feasibility of 193 nm Immersion Lithography for 45 nm
Sematech researchers have successfully used 193 nm immersion technology (193i) at 1.3 numerical aperture (NA) with azimuthal polarization to pattern features narrower than 45 nm half-pitch in multiple orientations simultaneously. ...
Oct 05, 2006 |
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TI developes 45-nm chip production process
Texas Instruments said Monday it had developed a 45-nanometer wet lithography process that doubles the number of chips it can produce on a silicon wafer.
Jun 12, 2006 |
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ASML Impacts Industry Roadmap with Immersion and EUV Achievements for 45 nm and Beyond
ASML Holding NV today announced significant progress towards development of both high NA immersion and Extreme Ultra Violet (EUV) lithography technology: two critical elements of the semiconductor industry’s ability to continue ...
Dec 06, 2005 |
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Intel to build 3.5 billion-dollar plant for 45 nm technology in Israel
Intel today announced plans to build a new 300-millimeter wafer fabrication facility at its site in Kiryat Gat, Israel. The new factory, designated Fab 28, will extend Intel’s manufacturing leadership by producing ...
Dec 01, 2005 |
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SEMATECH and Synopsys to Develop Advanced OPC Models For 45 nm and Below Immersion Lithography
Synopsys, Inc. and SEMATECH today announced a joint program to develop advanced optical proximity correction (OPC) models that will enable the extension of optical lithography.
Oct 04, 2005 |
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ASML Introduces the Industry's Highest NA Immersion Tool for Volume Chip Production at 45 nm Node
ASML Holding NV (ASML) today announced a new lithography system with the highest numerical aperture (NA) – 1.2 – in the semiconductor industry. The ASML TWINSCAN XT:1700i system is a 193 nm immersion scanner capable of volume ...
Jul 13, 2005 |
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Copper Resistivity Fixable for 45 nm Node, but Long-Term Issues Remain
Copper resistivity will remain a challenge for the semiconductor industry, but chip designers are likely to use hierarchical design workarounds to modify the metal for linewidths at the 45 nm technology node, according to ...
Jul 07, 2005 |
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Ultra-Dense SRAM cell in 45-nm Low-Cost, Low-Power Conventional Bulk CMOS Technology
The Crolles2 Alliance today presented a paper* describing the creation, under production conditions, of six-transistor SRAM-bit cells with an area less than 0.25 square microns – half the size of earlier solutions – using ...
Jun 15, 2005 |
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Engineers Achieve Breakthroughs Enabling Implementation of High-k Dielectrics at 45 nm Technology Node
Using a selected set of tools and processes, Sematech engineers have achieved twin breakthroughs in channel mobility and reliability of high-k/metal gate transistors, putting high-k technology for CMOS within reach at the ...
Apr 25, 2005 |
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Soitec, ATDF to Develop Multi-Gate Field Effect Transistors (MuGFETs) for 45-nm Technology and Beyond
In an effort to accelerate the development of new-generation transistors, Soitec, today announced its participation as the SOI substrate supplier in a development program led by ATDF -- Advanced Technology Development Facility ...
Jan 05, 2005 |
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