Briefs: Renesas to make LSIs for 3G mobiles
February 13th, 2006 in Technology /Chipmaker Renesas Technology will develop a next-generation large-scale integration circuit, a Japanese daily reported Monday.
The Nihon Keizai Shimbun said that the semiconductor manufacturer will collaborate with NTT DoCoMo, Fujitsu, Mitsubishi Electrics and Sharp among others to develop LSIs for third-generation phones.
The plan is to have the product ready for use by the autumn of 2007.
Copyright 2006 by United Press International
"Briefs: Renesas to make LSIs for 3G mobiles." February 13th, 2006. http://phys.org/news10809.html
