Sharp Develops Basic Technology for RRAM, Next-Generation Nonvolatile Memory

Dec 13, 2006

Sharp Corporation has developed basic technology for a novel high-speed programming system for RRAM (Resistance Random Access Memory), a next-generation nonvolatile memory capable of programming data at rates about 100 times faster than flash memory.

Based on collaborative research with the National Institute of Advanced Industrial Science and Technology, an independent administrative agency of the Japanese government, these results are the first step toward the practical use of this memory technology. Further R&D, including IC integration and microfabrication technologies, will continue in the future aimed at bringing a commercially viable product to market.

RRAM is a memory device in which electrical resistance changes of a metal oxide film are functioned as the stored information, and this device can be operated with low voltages and at high speeds. There are high expectations for RRAM to be a next-generation memory that will enable large amounts of data to be programmed into memory at high speeds with low power consumption. However, it is not yet clear how resistance changes work in the metal oxide film, the key component of RRAM, and achieving a memory device that takes full advantage of the outstanding characteristics of RRAM has proven difficult.

In collaborative research with the National Institute of Advanced Industrial Science and Technology, Sharp has focused on resistor constituents other than the resistor components where the information of the RRAM memory devices is stored. The resistor constituents, which had not previously been controlled, were set to the different values when data is programmed and erased.

As a result, the company has achieved a High-Speed Unipolar Switching. Programming and erasing RRAM had previously required a positive and a negative power source, but this Sharp development makes these operations possible using a single power supply. The result is memory elements that function using simple circuit architecture. Dramatically simplifying the cell structure of the RRAM, which can program data at high-speeds and low power consumption, makes it possible to reduce the cell size. This technology also uses materials that are highly compatible with conventional CMOS processes, allowing existing production lines to be used.

Source: Sharp

Explore further: Infineon offers application optimized bipolar power modules introducing cost-effective solder bond modules

add to favorites email to friend print save as pdf

Related Stories

Rice's silicon oxide memories catch manufacturers' eye

Jul 10, 2014

(Phys.org) —Rice University's breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers ...

Imec achieves breakthroughs in enabling future DRAM and RRAM

Jul 12, 2011

In the frame of its research on future memory architectures, imec has made breakthroughs for both DRAM and RRAM memories. For DRAM, MIMcap (metal-insulator-metal capacitor) was established as a clear candidate for 1X DRAM ...

Promising new alloy for resistive switching memory

Sep 20, 2013

Memory based on electrically-induced "resistive switching" effects have generated a great deal of interest among engineers searching for faster and smaller devices because resistive switching would allow ...

Recommended for you

Audi to develop Tesla Model S all-electric rival

8 hours ago

The Tesla Model S has a rival. Audi is to develop all-electric family car. This is to be a family car that will offer an all-electric range of 280 miles (450 kilometers), according to Auto Express, which ...

A green data center with an autonomous power supply

13 hours ago

A new data center in the United States is generating electricity for its servers entirely from renewable sources, converting biogas from a sewage treatment plant into electricity and water. Siemens implemented ...

After a data breach, it's consumers left holding the bag

14 hours ago

Shoppers have launched into the holiday buying season and retailers are looking forward to year-end sales that make up almost 20% of their annual receipts. But as you check out at a store or click "purchase" on your online shopping cart ...

Can we create an energy efficient Internet?

14 hours ago

With the number of Internet connected devices rapidly increasing, researchers from Melbourne are starting a new research program to reduce energy consumption of such devices.

Brain inspired data engineering

15 hours ago

What if next-generation ICT systems could be based on the brain's structure and its cognitive and adaptive processes? A groundbreaking paradigm of brain-inspired intelligent ICT architectures is being born.

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.