Samsung Develops 40nm 32 Gb NAND Flash

Sep 11, 2006
Samsung Develops 40-nm 32 Gb NAND Flash

Samsung Electronics today announced that it has developed the industry’s first 40-nanometer memory device. The new 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance.

The new CTF-based NAND flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm.

In each 32Gb device, the control gate in the CTF is only 20 percent as large as a conventional control gate in a typical floating gate structure. With CTF, there is no floating gate. Instead, the data is temporarily placed in a “holding chamber” of the non-conductive layer of the flash memory composed of silicon nitride (SiN). This results in a higher level of reliability and better control of the storage current.

The 32Gb NAND flash memory can be used in memory cards with densities of up to 64-Gigabytes (GBs). One 64GB card can store over 64 hours of DVD resolution movies (40 movies) or 16,000 MP3 music files (1,340 hours).

The CTF design is enabled through the use of a TANOS structure comprised of tantalum (metal), aluminum oxide (high k material), nitride, oxide and silicon. The use of a TANOS structure marks the first application of a metal layer coupled with a high k material to the NAND device.

The TANOS CTF architecture, which serves as the foundation of the 40nm 32Gb CTF NAND flash announced today, was developed after extensive research of the Samsung Semiconductor R&D department. Samsung first revealed the TANOS structure through a paper at the 2003 International Electron Devices Meeting (IEDM).
The new 32Gb CTF memory was announced at the sixth annual Samsung press conference in Seoul.

Introduction of a 40nm manufacturing process for 32Gb NAND flash marks the seventh generation of NAND flash that follows the New Memory Growth Theory of double-density growth every 12 months, which was first presented by Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics’ Semiconductor Business in a keynote address at ISSCC 2002.

Source: Samsung Electronics

Explore further: High-end 'upstream' Linux laptop plans to ship in April

add to favorites email to friend print save as pdf

Related Stories

SK Hynix Q4 profit doubles to record level

Jan 28, 2015

South Korean chipmaker SK Hynix said Wednesday its profits more than doubled in the fourth quarter to a record high, thanks to the soaring popularity of new mobile devices such as Apple's iPhones.

Chip sales cushion Samsung Q4 profit decline

Jan 08, 2015

Samsung Electronics, the world's largest smartphone maker, flagged a lighter than expected profit decline in the fourth quarter Thursday, with memory chip sales cushioning a continued slump in mobile revenue.

Samsung wobbles but stays its ground

Nov 02, 2014

Buffeted by sliding profits and emboldened competitors, mighty Samsung Electronics is looking unusually vulnerable these days, but analysts say its financial muscle and product diversity make "crisis" talk ...

Toshiba launches 19nm process NAND flash memory

Apr 21, 2011

(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...

Recommended for you

Google delivers another earnings letdown, stock sinks

1 hour ago

Google has gotten into the habit of missing analysts' earnings targets, frustrating investors who believe the online search leader would be more profitable it wasn't pouring so much money into far-flung projects ...

Skin device uses motion to power electronics

2 hours ago

Can a skin patch power wearables? Skin-based generators have become an area of focus among researchers working on how to scavenge muscle motion whereby skin becomes a charge-collector. A detailed report in ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.