Samsung Produces 60-Nanometer 8-Gigabit NAND Flash Memory

Jul 19, 2006
Samsung Produces 60-Nanometer 8-Gigabit NAND Flash Memory

Samsung Electronics today announced that it has begun mass producing an 8-Gigabit (Gb) NAND flash memory device, providing a much larger and more affordable storage density for consumer and mobile applications such as mobile phones, MP3 players and gaming consoles. The high-density MLC (multi-level-cell) memory is being produced with 60-nanometer process technology - the smallest used today.

Samsung's 8Gb NAND flash memory, developed in September 2004, is the fifth consecutive NAND flash memory to follow the New Memory Growth Model of double density growth every 12 months, a pattern conceived by Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics Semiconductor Business.

Mass production of the new 8Gb chip allows Samsung to offer an 8-Gigabyte (GB) solution by vertically stacking two 4GB packages, each package carrying a vertical stack of four 8Gb dies. The 8GB NAND which can store 2000 MP3 files or 225 minutes of DVD-quality video is expected to be available in the third quarter of 2006.

Samsung plans to further utilize its 8-Gb NAND flash memory chip in Samsung's high-density MLC NAND, called moviNAND, to produce a 2GB-level NAND market solution. The recently introduced moviNAND combines NAND flash memory and a NAND controller and can be embedded in mobile handsets to accommodate the high data storage requirements that accompany the increasing number of multimedia features on mobile phones.

The newest technology advancement brings 25 percent higher manufacturing productivity over the previous 70nm design technology. It follows the introduction of 80-nm production process technology for DDR2 DRAM a little more than a year ago (March 2005).

Source: Samsung Electronics

Explore further: Successful read/write of digital data in fused silica glass with high recording density

add to favorites email to friend print save as pdf

Related Stories

Toshiba launches 19nm process NAND flash memory

Apr 21, 2011

(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...

Recommended for you

Magic Leap moves beyond older lines of VR

6 minutes ago

Two messages from Magic Leap: Most of us know that a world with dragons and unicorns, elves and fairies is just a better world. The other message: Technology can be mindboggingly awesome. When the two ...

NBCUniversal settles with unpaid interns for $6.4M

1 hour ago

NBCUniversal will pay $6.4 million to settle a class action lawsuit brought by unpaid interns who worked on "Saturday Night Live" and other shows who claim they are owed wages, according to court documents.

Team infuses science into 'Minecraft' modification

1 hour ago

The 3-D world of the popular "Minecraft" video game just became more entertaining, perilous and educational, thanks to a comprehensive code modification kit, "Polycraft World," created by University of Texas at Dallas professors, ...

States ascend into the cloud

1 hour ago

Seven years ago, the state of Delaware started moving computer servers out of closets and from under workers' desks to create a consolidated data center and a virtual computing climate.

User comments : 0