Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that its Hiroshima Plant has begun volume production of 40nm process 2-gigabit DDR3 SDRAMs. Since completing development of the DDR3 SDRAM last October it has taken Elpida only two months to ramp up mass production.
The new 2-gigabit DDR3 SDRAM achieves 44% more chips per wafer compared with Elpida's 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps, the fastest speed standard for current DDR3. It also supports high-speed products. Compared with 50nm products, it uses about two-thirds less current and supports 1.2V/1.35V operation as well as DDR3 standard 1.5V, resulting in reduced power consumption of around 50%.
Initially, Elpida plans a phased expansion of 40nm 2-gigabit DDR3 SDRAM mass production at its Hiroshima Plant. In the second quarter of 2010, 40nm process production will also begin at Rexchip, a subsidiary in Taiwan, to increase the manufacture of 40nm process products in order to lower products costs. Depending on conditions in the DRAM market, Elpida may transfer 40nm process technology to foundry partners ProMOS and Winbond to expand production based on this technology to an even higher level.
Explore further: Halogen-free leaded multilayer ceramic capacitors for automotive and general-purpose applications