Industry's first mass production of DRAM in 90nm technology

Sep 09, 2004
Samsung 512Mb DDR SDRAM

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, announced today the industry's first mass production of 90nanometer (nm) 512Mb DDR SDRAM on 300mm base wafers. Samsung pioneered nanometer level production technology in 2003 with production of 2Gb NAND flash memory in a 90nm process.

The 90nm 512Mb DDR SDRAM with voltage rates of 2.5V is available at both 400 and 333MHz. The new device is already being verified by leading chipset companies. The migration from 0.10micron to 90nm boosts production by 40 percent and offers higher production efficiencies at the same time.

The key to successful production in 90nm process technology are; short wave length Argon Fluoride (ArF) light source that realizes the finer circuitry, high dielectric Alumina Hafnium Oxide (AHO) applied within the capacitor to enhance data storage characteristics, and Samsung's unique three dimensional transistor circuitry, Recessed Channel Array Transistor (RCAT), implemented to reinforce the capacitors’ data retaining features enhancing the refresh cycles.

Market research firm, Gartner Dataquest, forecasts the transition of DRAM market will transition from 256Mb to 512Mb as the memory industry mainstay density in the second half of 2004, with 512Mb densities to reach $13billion in 2005.

Explore further: Self-cooling solar cells boost power, last longer

add to favorites email to friend print save as pdf

Related Stories

Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM

Nov 14, 2005

Samsung Electronics announced that it has started to mass produce 512Mb DRAM (dynamic random access memory) for mobile products, using 90nm circuitry. This marks the first time that 512Mb mobile DRAM will ...

ProMOS Debuts First 90nm Silicon with High Yield

Jul 13, 2005

ProMOS Technologies today announced that the first pilot lot by 90nm stack technology node at ProMOS 300mm Fab 3 has successfully wafered out with yield above 60%. ProMOS is the very first Taiwan DRAM company to achieve this ...

Recommended for you

Google made failed bid for Spotify

4 hours ago

Internet titan Google tried last year to buy streaming music service Spotify but backed off for reasons including a whopping price tag, the Wall Street Journal reported on Tuesday.

Thieves got into 1K StubHub accounts

4 hours ago

(AP)—Cyber thieves got into more than 1,000 StubHub customers' accounts and fraudulently bought tickets for events through the online ticket reseller, a law enforcement official and the company said Tuesday.

Microsoft CEO sees 'bold' plan as 4Q tops Street

4 hours ago

(AP)—Microsoft Corp. CEO Satya Nadella painted an upbeat vision of the future Tuesday, saying that the next version of Windows will be unified across screens of all sizes and that two money-losing units—Nokia ...

User comments : 0