Toshiba, SanDisk to mass produce high-power '3D' memory

May 14, 2014
A SanDisk memory card is displayed at the Mobile World Congress in Barcelona, on February 16, 2010

Japan's Toshiba is teaming up with US chip giant SanDisk to produce a "3D" memory chip they hope will allow users to save up to 50 hours of ultra-high definition video.

In a deal worth a reported 500 billion yen ($4.84 billion) the companies will build a factory to make consisting of several layers of semiconductors stacked together to give as much as a terabyte—1,000 gigabytes—of storage.

That is around 16 times bigger than the largest 64-gigabyte Toshiba memory currently available in and tablet devices.

Toshiba will demolish its existing plant in Japan to build a new facility that will house production apparatus using technologies from both firms and which the firms hope will start operating in 2016, a statement said.

"In about five years (from the planned start of the factory), we would like to produce one-terabyte products," said a Toshiba spokeswoman.

The plan comes at a time of increasing competition among the world's technology firms to meet demand for ever-higher capacity for consumers increasingly using mobile devices such as smart phones, tablet computers and .

The spread of high-definition video, with so-called 4K screens at the leading edge, is boosting demand for computing memory to store content.

"Small, high-capacity memories can of course be applied to smartphones, but they could also be used for wearable devices," the Toshiba spokeswoman said.

Manufacturers have traditionally competed with regular chips by trying to make the physical object smaller.

Toshiba, along with major rivals such as Samsung, believe they are reaching the physical limit, and are shifting toward 3D memories, where layering—effectively a third dimension—is used to boost the capacity of objects the same size.

Yasuo Naruke, Toshiba senior vice president, said in a statement: "Our determination to develop advanced technologies underlines our commitment to respond to continued demand (for) flash memory."

SanDisk president and chief executive Sanjay Mehrotra said the plant "will advance our leadership in memory technology into the 3D... era".

Explore further: Toshiba starts mass production of world's first 15nm NAND flash memories

add to favorites email to friend print save as pdf

Related Stories

Toshiba launches 19nm process NAND flash memory

Apr 21, 2011

(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...

Toshiba returns to black on smartphone chip demand

Jan 31, 2011

(AP) -- Toshiba Corp. said Monday it returned to the black in the October-December quarter thanks to robust global demand for the flash memory chips used in digital cameras and smartphones.

Toshiba to launch 32nm process NAND flash memory

Apr 27, 2009

Toshiba Corporation today announced that it will start shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit (Gb) single chips (4 gigabytes (GB)), ...

Recommended for you

Wireless sensor transmits tumor pressure

6 hours ago

The interstitial pressure inside a tumor is often remarkably high compared to normal tissues and is thought to impede the delivery of chemotherapeutic agents as well as decrease the effectiveness of radiation ...

Tim Cook puts personal touch on iPhone 6 launch

7 hours ago

Apple chief Tim Cook personally kicked off sales of the iPhone 6, joining in "selfies" and shaking hands with customers Friday outside the company's store near his Silicon Valley home.

Team improves solar-cell efficiency

22 hours ago

New light has been shed on solar power generation using devices made with polymers, thanks to a collaboration between scientists in the University of Chicago's chemistry department, the Institute for Molecular ...

Calif. teachers fund to boost clean energy bets

22 hours ago

The California State Teachers' Retirement System says it plans to increase its investments in clean energy and technology to $3.7 billion, from $1.4 billion, over the next five years.

User comments : 2

Adjust slider to filter visible comments by rank

Display comments: newest first

alfie_null
2 / 5 (2) May 14, 2014
If you want to have a reason to consume huge gobs of memory, figure out a way to do truly immersive 3D TV. Something like Star Trek's holodeck. I'm not convinced 4K won't turn out to be another barely whelming success, like stereo 3D TV.

Seems our computing infrastructure is being increasingly influenced by videos. Not just storing them, but the fat pipes necessary to transport them.
Benni
4 / 5 (3) May 14, 2014
The news release isn't clear that this is probably NAND memory technology & not DRAM. NAND memory chips have already reached the smallest possible cell limit of 15 nanometers & is literally up against a stone wall to make 15 nm NAND cells smaller, hence comes the idea for stacking 15 nm cell size chips.

The problem this technology will be up against is increased power requirement of 20 times the power consumption of 18-20 nanometer technology, this is because heat sinking with 15 nm cells is not nearly as efficient & heat generated will result in frequent breakdown.

Other technology such as RRAM & MRAM is already vastly more efficient at a fraction of the power consumption, of course the present cost for these memory chips is 2-3 times for Flash NAND but Crossbar has just recently announced a process for production of resistive RRAM that competes on price for Flash NAND & begins production later this year.

Heads up Tim Cook, buy Crossbar & be light years ahead of Samsung.