This week at APEC 2013, Toshiba America Electronic Components will introduce a new lineup of high-speed diodes (HSD): the TK16A60W5, TK31J60W5 and TK39J60W5. Based on Toshiba's fourth generation 600V system super junction MOSFET DTMOS IV series, the new lineup of HSDs improve power efficiency in switching power supplies, micro inverters, adaptors, and photovoltaic inverters. The new HSDs will be highlighted in Toshiba's booth #919 on the APEC show floor from March 17-21.
Using the latest single epitaxial process, this series has achieved the industry's highest level of RON•A and high speed parasitic diodes. The TK16A60W5, TK31J60W5 and TK39J60W5 can further reduce loss by achieving a recovery time that is one third that of previous models, which significantly contributes to improvements in power efficiency.
Super junction MOSFETs offer ultra-low on resistance without power loss penalties . Using Toshiba's state-of-the-art single epitaxial process, the fourth generation super junction 600V DTMOS IV MOSFET series provides a 30 percent reduction in RON•A, a figure of merit (FOM) for MOSFETs, when compared to its predecessor, DTMOS III. A reduction in RON•A makes it possible to house lower RON chips in the same packages, helping to improve the efficiency and reduce the size of power supplies.
According to Norio Nakashima, business development specialist for TAEC, "Toshiba's DTMOS-IV technology uses a deep-trench process that narrows the lateral SJ pitch, leading to optimized overall performance. As a result, our new series gives customers a highly efficient switching device at an excellent cost-performance ratio."
- Compared to previous models, high speed parasitic diodes cut reverse recovery time by approximately one third
- A 30 percent reduction in RON•A compared to conventional products (DTMOS III)
- Small increases in low ON-resistance and recovery time at high temperatures due to the use of the single epitaxial process
- A wide lineup for ON-resistance (0.65 to 0.074 Ω)
- A wide-ranging package lineup
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