Ultra-thin hybrid floating gate cell presented at IEDM2012

Dec 11, 2012
TEM of Ultra thin Hybrid Floating Gate (HFG) with high-k Inter Gate Dielectric (IGD) extending Flash scaling beyond 1x node.

Imec has developed an ultra-thin hybrid floating gate cell with demonstrated functionality. The results, which are presented at this week's 2012 IEEE International Electron Devices Meeting (IEDM, San Francisco, December 10-12, 2012), are an important step for further scaling of NAND Flash technology towards the 10nm half pitch node and beyond.

The increasing need for high density has driven the scaling of the technology down to the 19nm half pitch node which is currently in production. However, from such dimensions on, the Control Gate (CG) can no longer be wrapped around the Floating Gate (FG), urging for a planar floating gate architecture. But planarising the technology results in a reduced coupling of the CG and FG. Consequently, the performance degrades due to leakage through the Interpoly dielectric (IPD). In order to recover the performance in planar devices, imec has developed a Hybrid Floating Gate (HFG) architecture featuring a low work function material at the bottom and a high work function material at the top. The functionality has been successfully demonstrated in integrated cells. Moreover, to limit the cell to cell interference occuring in a high-density NAND array, imec scaled down the thickness of the hybrid floating gate to only 4nm.

Jan Van Houdt, Director of the Flash memory program at imec: "Flash memory is the state-of-the-art technology in all mobile devices, ranging from cell phones, digital cameras, USB sticks, MP3 players and tablets, to solid state drives. To address the exploding demand for in such devices, imec is pushing the roadmap of the current . We are excited to have demonstrated this functional ultra-thin hybrid floating gate , as an enabling solution for our partners to scale Flash memory down to 10nm and further increase the memory capacity in next-generation mobile devices".

Explore further: Using materials other than silicon for next generation electronic devices

More information: These results were obtained in cooperation with imec's key memory partners INTEL, Micron, Samsung, SanDisk, Toshiba and SK Hynix.

add to favorites email to friend print save as pdf

Related Stories

Organic flash memory developed

Dec 17, 2009

(PhysOrg.com) -- Researchers at the University of Tokyo have developed a non-volatile memory that has the same basic structure as a flash memory but is made from cheap, flexible, organic materials.

Toshiba launches 19nm process NAND flash memory

Apr 21, 2011

(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...

Recommended for you

China's Alibaba plans IPO for week of September 8

4 hours ago

Chinese e-commerce giant Alibaba plans to hold its initial public offering on the US stock market the week of September 8, the Wall Street Journal reported Saturday, citing a person familiar with the matter.

Tablet sales slow as PCs find footing

5 hours ago

Tablets won't eclipse personal computers as fast as once thought, according to studies by market tracker International Data Corporation (IDC).

Startups offer banking for smartphone users

5 hours ago

The latest banks are small enough to fit in the palm of your hand. Startups, such as Moven and Simple, offer banking that's designed specifically for smartphones, enabling users to track their spending on the go. Some things ...

FIXD tells car drivers via smartphone what is wrong

19 hours ago

A key source of anxiety while driving solo, when even a bothersome back-seat driver's comments would have made you listen: the "check engine" light is on but you do not feel, smell or see anything wrong. ...

User comments : 0