New form of hafnium oxide developed

Feb 07, 2012
Photo credit: Andrew Flewitt

(PhysOrg.com) -- A novel material developed by researchers at the University of Cambridge is opening up new possibilities for next generation electronic and optoelectronic devices, and paving the way for further component miniaturisation.

The material, a new form of hafnium oxide, was developed by Dr Andrew Flewitt’s research group in the Department of Engineering. The material provides exceptionally high dielectric constant compared with currently existing forms of hafnium oxide, which is already a key material in the electronics industry.

Metal oxides are used in a wide variety of applications. Normally, they are produced on substrates by sputtering, a process by which some of the atoms of an electrode are ejected as a result of bombardment by heavy positive ions. One of the problems when attempting to make high-quality electronic materials through sputtering, however, is the difficulty in precisely controlling the energetics of the deposition process, and hence the material properties such as defect density.

In order to enable much greater control of the material properties, Dr Flewitt and his team began using a novel deposition technology to promote plasma sputtering. The technology, known as HiTUS (High Target Utilisation Sputtering), was developed by a UK-based company, Plasma Quest Ltd. One of the first that the Cambridge team looked at using HiTUS was hafnium oxide.

Hafnium oxide is an electrical insulator which is used in optical coatings, capacitors and transistors, among other applications. Many companies are currently using hafnium oxide to replace silicon dioxide in transistors, due to its high ratio of electric displacement in a medium to the intensity of the electric field producing it, known as a dielectric constant. The higher the dielectric constant of a material, the higher its capacitance - the ability to store an electric charge.

Hafnium oxide forms in different crystalline and polycrystalline structures: monoclinic, cubic and orthorhombic. However, an amorphous form is preferable to polycrystalline forms due to the absence of grain boundaries, the point at which two crystals in a polycrystalline material meet. Grain boundaries act as conduction paths through thin films of the material. They not only reduce the resistivity, but lead to a non-uniformity in conductivity over a large area, which itself leads to spatial non-uniformity in device performance However, until now amorphous hafnium oxide has had a relatively low dielectric constant of around 20.

The form of hafnium oxide developed by Dr Flewitt has a dielectric constant higher than 30.

“Most people thought that all amorphous hafnium oxide had to exist in the monoclinic-like phase,” says Dr Flewitt. “What we’ve shown is that it can exist and does exist in a cubic-like phase. This is similar to amorphous carbon, where you can get diamond-like properties out of amorphous carbon material.”

Amorphous dielectrics are more homogenous than other forms, allowing improved uniformity from one device to another, and the absence of grain boundaries results in higher effective resistivity, as well as less optical scatter.

The material is produced using a room-temperature, high-deposition rate process, making it particularly suitable for plastic electronics and high-volume semiconductor manufacturing. The absence of makes the material ideal for optical coatings and more efficient solar cells.

Cambridge Enterprise, the University’s commercialisation group, is currently seeking commercial partners for collaborative development and licensing of this material.

Explore further: Researchers open possible avenue to better electrolyte for lithium ion batteries

Provided by Cambridge University

4.6 /5 (5 votes)

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User comments : 4

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oslovitjanin
1 / 5 (1) Feb 07, 2012
How wise is it to develop new materials based on an element whose reserves "are projected to last under 10 years if the world population increases and demand grows" (Wikipedia)?
Callippo
1 / 5 (1) Feb 07, 2012
Physicists have no problem with unwise approach and with absence of applications of their findings. It's us who should have it and don't pay such a research. On the other hand, the HiTUS spattering technology is developed just respect to high target utilization, as its name implies. The compactness of new material would enable to use thinner layers of hafnium oxide, i.e. to decrease the hafnium demand. So I do perceive it as rather useful applied research in this particular case. The cold fusion technology would enable the mass scale treatment of ores with low content of rare elements. This is particularly important at the case of indium, hafnium or rare earth elements, which are quite widespread, but due the lack of own minerals they're diluted in low concentration across the Earth mantle. Maybe in future we will develop the robots floating trough molten rocks and magma and extracting rare metals from it via electrolysis or something similar.
Vendicar_Decarian
Feb 07, 2012
This comment has been removed by a moderator.
bear_dressed_as_a_monkey
1 / 5 (5) Feb 07, 2012
How wise is it to develop new materials based on an element whose reserves "are projected to last under 10 years if the world population increases and demand grows" (Wikipedia)?

If reserves of a material are low, and demand for that material is projected to increase, then research that results in more efficient use of that material in common processes seems fairly wise to me.
Eikka
1 / 5 (1) Feb 07, 2012
This reminds me, has anyone heard of EEStor lately? Did they get sued out of their pants, or do people still believe it wasn't a scam?

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