Elpida Memory develops resistance RAM prototype

ReRAM (Resistance Random Access Memory) is next-generation semiconductor memory technology that uses material which changes resistance in response to changes in the electric voltage. This new type of non-volatile memory can store data even when the power supply is turned off. Its most attractive feature is that it can read/write data at high speeds using little voltage. While dynamic random-access memory (DRAM) is superior to existing non-volatile memory with respect to read/write speeds and endurance, DRAM quickly loses data when the power supply is removed. NAND flash memory, a leading example of nonvolatile memory, retains data even when the power is removed but has performance measures that are inferior to DRAM.

ReRAM, on the other hand, is a type of semiconductor memory that contains the advantages of both DRAM and NAND flash memory. It has a write speed of 10 nanoseconds, about the same as DRAM, and write endurance of more than a million times, or more than 10 times greater than NAND flash.

Elpida plans to continue development toward a 2013 goal of volume production of ReRAM in the gigabit capacity class using a 30nm process technology. If the high-speed durable new memory can be provided at low cost it will contribute enormously to a reduction of memory power consumption. This will make it an attractive storage (recording medium) option in a variety of information technology products, such as smartphones, tablet devices and ultra-thin light notebook PCs.

Elpida continues to develop process migration and other technology related to DRAM and at the same time promotes the development of ReRAM as a promising next-generation memory that can substitute for DRAM functions.

Source: Elpida Memory