Samsung offers industry's first 64-gigabit MLC NAND flash, using toggle DDR 2.0 interface

May 13, 2011

Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, made possible by using an advanced 20 nanometer (nm) class process technology. The chip is designed to support the high-performance requirements of mobile devices such as smartphones, tablets and solid state drives (SSDs).

Equipped with a toggle DDR (Double Data Rate) 2.0 interface, the new 64Gb MLC chip can transmit data at a bandwidth of up to 400 megabit per second (Mbps). This provides a 10-fold increase over the 40Mbps Single Data Rate (SDR) NAND flash memory in widespread use today, and a three-fold boost over 133Mbps toggle DDR 1.0, 32Gb NAND flash memory, which Samsung was first to produce in 2009.

“With this 20nm-class, 64Gb, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs,” said Wanhoon Hong, executive vice president, memory sales & marketing, . “We will continue to aggressively develop the world's most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide.”

The high-speed 400Mbps bandwidth of toggle DDR 2.0 is expected to better support the ongoing shift toward advanced interfaces, as more mobile and consumer electronics devices requiring added performance and higher densities adopt new interfaces such as USB 3.0 and SATA 6.0Gbps,

Further, the new 64Gb MLC NAND chip offers an approximate 50-percent increase in productivity over 20nm-class 32Gb MLC NAND chips with a toggle DDR 1.0 interface (which Samsung started producing in April last year) and more than doubles the productivity of 30nm-class 32Gb MLC NAND.

According to IHS iSuppli, the worldwide NAND flash memory market will continue to steadily grow from approximately 11 billion 1 Gigabyte (GB) equivalent unitsin 2010 to 94 billion 1GB equivalent units in 2015 with a CAGR of 54 percent. In addition, shipments of NAND with 64Gb or higher density are expected to account for approximately 70 percent of total memory shipments in 2012, a huge increase from the three percent level in 2010.

Explore further: US spy agency patents car seat for kids

Provided by Samsung Corporation

5 /5 (1 vote)
add to favorites email to friend print save as pdf

Related Stories

Samsung Produces 60-Nanometer 8-Gigabit NAND Flash Memory

Jul 19, 2006

Samsung Electronics today announced that it has begun mass producing an 8-Gigabit (Gb) NAND flash memory device, providing a much larger and more affordable storage density for consumer and mobile applications ...

Recommended for you

Microsoft unveils Xbox in China as it faces probe

9 hours ago

Microsoft on Wednesday unveiled its Xbox game console in China, the first to enter the market after an official ban 14 years ago, even as it faces a Chinese government probe over business practices.

Teens love vacation selfies; adults, not so much

10 hours ago

(AP)—Jacquie Whitt's trip to the Galapagos with a group of teenagers was memorable not just for the scenery and wildlife, but also for the way the kids preserved their memories. It was, said Whitt, a "selfie ...

Tiny UAVs and hummingbirds are put to test

11 hours ago

Hummingbirds in nature exhibit expert engineering skills, the only birds capable of sustained hovering. A team from the US, British Columbia, and the Netherlands have completed tests to learn more about the ...

US spy agency patents car seat for kids

13 hours ago

Electronic eavesdropping is the National Security Agency's forte, but it seems it also has a special interest in children's car seats, Foreign Policy magazine reported Wednesday.

User comments : 0