Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si

May 26, 2011
Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si
Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si

(PhysOrg.com) -- Imec and its partners in the GaN industrial affiliation program (IIAP) have produced device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers.

With these wafers, functional GaN MISHEMTs were processed using standard CMOS tools. The used processes are compatible with the strict contamination rules in a standard CMOS processing line (e.g. no use of gold). These first GaN devices on 200mm wafers are an important milestone on the path to cost-effective production of power devices in high-productivity 200mm fabs.

GaN is a promising material for next-generation power devices with a performance beyond what is possible with . Imec has recently succeeded in producing 200mm GaN-on-Si wafers with crack-free surfaces and a bow of less than 50µm. The wafers were made using an advanced MOCVD system from Applied Materials. The ability to use 200mm wafers is an important milestone, because it brings processing in reach of regular high-productivity 200mm fabs, allowing for an important cost reduction compared to processing smaller wafers on dedicated processing lines.

A second prerequisite for cost-effective processing, next to the size, is that power devices can be fabricated with processes that are compatible with standard CMOS processes and tools. Imec proved this by processing its GaN-on-Si wafers using standard CMOS tools, yielding functional GaN MISHEMTs (metal-insulator-semiconductor HEMT). All equipment was verified for its capability to handle the wafers, and required only minimal adjustments in software and hardware. Conventionally, is used for ohmic contacts and gate structures in power devices, but it makes GaN processing incompatible with conventional CMOS processing. To overcome this, based the ohmic contact formation on an Au-free metallization system, and modified the Schottky gate to a gate dielectric based gold-free metal-insulator-semiconductor (MIS) structure. This introduction of the MISHEMT structure had the added advantage of reducing the high leakage current of conventional HEMTs.

Explore further: Infineon offers application optimized bipolar power modules introducing cost-effective solder bond modules

add to favorites email to friend print save as pdf

Related Stories

Recommended for you

Audi to develop Tesla Model S all-electric rival

13 hours ago

The Tesla Model S has a rival. Audi is to develop all-electric family car. This is to be a family car that will offer an all-electric range of 280 miles (450 kilometers), according to Auto Express, which ...

A green data center with an autonomous power supply

18 hours ago

A new data center in the United States is generating electricity for its servers entirely from renewable sources, converting biogas from a sewage treatment plant into electricity and water. Siemens implemented ...

After a data breach, it's consumers left holding the bag

19 hours ago

Shoppers have launched into the holiday buying season and retailers are looking forward to year-end sales that make up almost 20% of their annual receipts. But as you check out at a store or click "purchase" on your online shopping cart ...

Can we create an energy efficient Internet?

19 hours ago

With the number of Internet connected devices rapidly increasing, researchers from Melbourne are starting a new research program to reduce energy consumption of such devices.

Brain inspired data engineering

20 hours ago

What if next-generation ICT systems could be based on the brain's structure and its cognitive and adaptive processes? A groundbreaking paradigm of brain-inspired intelligent ICT architectures is being born.

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.