Using 30nm class technology, Samsung develops industry's first DDR4DRAM

Jan 06, 2011

Samsung Electronics announced today that it completed development of the industry’s first DDR4 DRAMmodule last month, using 30 nanometer (nm) class process technology.

“Samsung has been actively supporting the IT industry with our green initiative bycoming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year,” said Dong Soo Jun, president, memory division, . “The new DDR4 DRAM will build even greater confidence in our cutting-edgegreenmemory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation for mainstream application.”

The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps)at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5VDDR3 module.

The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when readingand writing data.

By employing new circuit architecture, Samsung’s DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today’s typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.

Late last month, Samsung provided 1.2V 2gigabyte (2GB) DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing.

Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.

Samsung has been leading the advancement of DRAM technology ever since it developed the industry’s first DDR DRAM in 1997. In 2001, it introduced the first DDR2 DRAM, and in 2005, announced the first DDR3 using 80nm-class technology.

Explore further: Using materials other than silicon for next generation electronic devices

add to favorites email to friend print save as pdf

Related Stories

Elpida Completes Development of 50nm Process DDR3 SDRAM

Nov 26, 2008

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has completed development of a 50nm process DDR3 SDRAM. The new DRAM product features the lowest power consumption ...

Recommended for you

User comments : 1

Adjust slider to filter visible comments by rank

Display comments: newest first

Quantum_Conundrum
not rated yet Jan 06, 2011
That's amazing.

That's a 33% to 100% increase in data transfer performance, with a 40% reduction in energy use.