Panasonic Develops A Gallium Nitride (GaN) Power Device with A New Junction Structure

Dec 17, 2008

Panasonic today announced the development of a Gallium Nitride (GaN) -based diode with a new junction structure called "Natural Super Junction". The new GaN diode with low operating loss is applicable to a variety of consumer and industrial power switching systems.

The new junction structure consists of multilayered GaN-based semiconductor thin films with different compositions of which each interface produces fixed positive and negative charges by the material's unique polarization. The layered structure acts as an insulator at the reverse bias owing to the complete balancing of the fixed charges so that the breakdown voltage can be increased just by extension of the distance between the two electrodes.

The increase of the number of the multilayer resulting in the increase of the current channels effectively reduces the on-state resistances as well. The proposed device structure is similar to super junction of Si devices in which p-type and n-type layers are alternately stacked. The new junction structure does not require any precise control of the doping concentration in the layers as is necessary for the Si super junction. The high breakdown voltages can be achieved taking advantage of naturally formed fixed charges and thus it can be called natural super junction.

The new GaN-based diode exhibits high breakdown voltage of 9400 V with low on-state resistance of 52 mΩcm2, which reaches the predicted limitation by GaN-based semiconductors for the first time. It is also noted that Panasonic's proprietary formation technique of the electrodes over the recessed structure reduces the contact resistance between the electrodes and the current channels, which greatly helps to reduce the on-state resistances.

Applications for one hundred and twenty four domestic and eighty international patents have been filed. These research and development results have been presented at International Electron Devices Meeting 2008, held at San Francisco, U.S. from December 15 to 17, 2008.

Provided by Panasonic

Explore further: Multilayer varistors provide high surge current capability in a very compact design

Related Stories

Axons' unexpected cytoskeleton structure

Jan 28, 2013

(Phys.org)—The plasma membranes that give cells their shapes are typically upheld by linear meshworks of the protein actin. In contrast, Howard Hughes Medical Institute scientists have now discovered that ...

Recommended for you

Solar Impulse 2 pilot becomes aviation legend

4 hours ago

At 62 years of age, Swiss Solar Impulse 2 pilot Andre Borschberg has made aviation history with a record breaking solo flight across the Pacific that he has called "an interior journey".

Facegloria: Facebook for Brazil's Evangelicals

4 hours ago

Fluffy clouds waft across a blue sky as you log in and while you chat with friends, Gospel music rings out: welcome to Facegloria, the social network for Brazilian Evangelicals.

Mexico City proposes regulations for Uber

4 hours ago

Mexico City is proposing regulations that would allow Uber and other smartphone-based ride-sharing apps to operate, while requiring drivers and cars to be registered, the city's Office of Legal and Legislative Studies said ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.