Panasonic Develops a Gallium Nitride (GaN) Power Transistor with Ultra High Breakdown Voltage over 10000V

December 13, 2007
Panasonic Develops a Gallium Nitride (GaN) Power Transistor with Ultra High Breakdown Voltage over 10000V

Panasonic today announced the development of a Gallium Nitride (GaN) power transistor with the ultra high breakdown voltage over 10000V. This breakdown voltage is more than 5 times higher than previously reported highest values in GaN power transistors. The new GaN transistor is applicable to high-voltage and low-loss power switching devices.

A novel device structure and a high quality GaN film on a highly resistive sapphire substrate realize ultra high breakdown voltage of 10400 V with low on-state resistance of 186 Ωcm2.

Overlap of the electrodes via insulating film on the surface side is eliminated by use of a back-side electrode with through-holes in the sapphire, which results in the ultra high breakdown voltage. The through-hole in chemically stable sapphire is formed by a novel laser drilling technique using a high power pico-second laser.

In addition, Panasonic's proprietary epitaxial growth technology greatly helps to extract the superior inherent material property of GaN resulting in the high breakdown voltage together with the low on-state resistance. This new GaN power transistor with ultra high breakdown voltage is applicable to high voltage power switching devices for industry and electrical power systems.

Applications for one hundred and ten domestic and sixty nine international patents have been filed. These research and development results have been presented at International Electron Devices Meeting 2007, held at Washington D.C., U.S. from December 10 to 12, 2007.

Source: Panasonic

Explore further: GaN diodes with high current operations and a low turn-on voltage

Related Stories

GaN-based transistor blocking voltage exceeds 1kV

August 24, 2015

Research reported in Applied Physics Express (APEX) describes the development of 'vertically orientated' GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride ...

Fast, efficient switching – thanks to HiPoSwitch

April 15, 2015

Electrical power comes out of wall sockets, of course. But hardly any electronic device can take normal line voltage. Computers, smartphones, LEDs, and chargers, for instance, cannot use electrical energy in that form – ...

Recommended for you

Toyota promises better mileage and ride with Prius hybrid

October 13, 2015

Toyota Motor Corp. released details for its fourth-generation Prius on Tuesday, promising that improvements in the battery, engine, wind resistance and weight mean better mileage for the world's top-selling hybrid car.

Facebook to test mobile app shopping tab

October 12, 2015

Facebook said Monday that it will begin testing a shopping tab for its mobile app as it works to ramp up advertising and online commerce offerings.

1 comment

Adjust slider to filter visible comments by rank

Display comments: newest first

3 / 5 (2) Dec 14, 2007
Have I had too much wine or am I stupid for not having understood a word of that?

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.