Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band

Oct 09, 2007
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band

Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band.

The main application of the new transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-definition broadcasts. Toshiba plans to start sample shipment of the new power FET by the end of 2007 and to go into mass production by the end of March 2008.

Advances in Ku-band microwave amplifiers focus on replacing the electron tubes conventionally used at this bandwidth with semiconductors, particularly GaN devices, which offer advantageous high power characteristics at higher microwave frequencies.

The new power FET has a high electron mobility transistor (HEMT) structure that Toshiba has optimized for the Ku-band. The company replaced source wire bonding with via hole technology*1 to reduce parasitic inductance, and also improved overall design of the matching circuit for practical application at Ku-band frequencies.

Demand for GaN power FET for radars and satellite microwave communications base stations is growing steadily, both for new equipment and replacement of electron tubes. Toshiba will meet this demand with early commercialization of its new Ku-band power FET.

Full details of the new GaN power FET will be presented at the European Microwave Conference 2007, in Munich, Germany from October 8 to 12.

Ever increasing communications flows in satellite microwave communications are driving demand for higher output power in signal amplifying devices, as is development of more powerful radar systems. Demand is particularly strong for GaN devices, which offer advantages over conventional gallium arsenide devices in heat dissipation and high power performance characteristics at high frequency.

Toshiba has taken the lead in applying GaN technology to power FET for microwave frequency applications. The company directed its initial efforts to the development and marketing of power FET for the 6GHz band (2005) and 9.5GHz (2006) band, and developed devices that achieved the worlds highest output power at those frequencies. The company has now extended its line-up to 14.5GHz. Toshiba will continue development for the18GHz to 30GHz frequencies (Ka-band) and beyond.

Source: Toshiba

Explore further: Researchers demonstrate electrical advantages of direct CU etch scheme for advanced interconnects

Related Stories

More than two dozen articles provide insights on mummies

2 hours ago

In a special issue, The Anatomical Record ventures into the world of human mummified remains. In 26 articles, the anatomy of mummies is exquisitely detailed through cutting edge examination, while they are put in historical, archeo ...

Supercomputers a hidden power center of Silicon Valley

5 hours ago

Silicon Valley is famed for spawning the desktop, mobile and cloud computing revolutions. What is less well known is that it's one of the nerve centers for building the world's fastest number-crunchers.

Recommended for you

Yik Yak's frat-bro founders shrug off growing pains

5 hours ago

The most popular post of all time on Yik Yak is a dirty joke. Less than 2 years old, the Atlanta-based social network is geared mostly toward college students who access and post unsigned announcements through an app on their ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.