Intel to Move NOR Flash Memory Products for Embedded to 65nm Process Technology

August 21, 2007

To support its embedded technology customers, Intel Corporation announced today plans to extend its embedded NOR flash products to the 65-nanometer (nm) generation.

According to the company, the move to 65nm process technology will provide price/performance balance and ensure support for extended product life cycles, both important factors to original equipment manufacturers (OEMs) designing for embedded market segments.

Intel's 65nm products, which are typically used in consumer electronics devices, wired communications equipment and industrial applications, are expected to start sampling to customers in the first half of 2008.

"Most embedded designs remain in production longer than cell phones or other consumer devices," said Glen Hawk, general manager, Intel Flash Products Group. "Intel NOR wireless products are already being manufactured in high volume on this leading edge process. We are using this knowledge and expertise to accelerate our product development and production schedule."

The move to 65nm process for embedded will enable Intel to support the longer product life cycle, as well as offer enhanced product features and cost efficiencies. Intel NOR product offerings for embedded market segments include both parallel and serial solutions. Intel StrataFlash Embedded Memory (P30/P33) is Intel's lowest cost-per-bit, high-density, high-performance single chip code and data solution.

Intel Embedded Flash Memory (J3 v.D) offers drop-in compatible upgrade paths for legacy designs. Its enhanced features support mainstream embedded applications that need value and scalability. The industry-standard Intel Serial Flash Memory (S33) simplifies board design and saves board space with a low pin-count interface and smaller package for a range of applications such as TVs, DVDs, PCs, modems and printers.

Source: Intel

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