Samsung First to Mass-produce 1Gb DDR2 Memory with 80nm Process Technology

August 29, 2006
Samsung First to Mass-produce 1Gb DDR2 Memory with 80nm Process Technology

Samsung Electronics, the world leader in advanced memory technology, announced today mass production of 1Gigabit (Gb) DDR2 DRAM memory using 80 nanometer (nm) process technology. While monolithic 1Gb DDR2 is available today, it is produced with more costly and less efficient 90 nm technology.

By applying 80nm process technology, Samsung will produce the world’s smallest DRAM package (11x11.5mm). This is 36% smaller than the 11x18mm package required for a DRAM chip utilizing 90nm and nearly as small as the 512Mb DRAM, which is half the size of a 90nm 1Gb chip.

Most 1Gb DRAM chips today are stacked in high-capacity DRAM modules for next-generation servers. These modules include the 4GB fully buffered Dual In-line Memory Module (DIMM) and the 2GB Small Outline Dual Inline Memory Module (SODIMM).

Thirty-six 1Gb DRAM chips are needed to create a 4GB module, which has had to be configured either by stacking two chips on top of one another or by enclosing two chips into the same package. Avoiding chip stacking simplifies the production process, lowers production costs and enhances overall electrical properties.

The market research firm Gartner estimated that the global DRAM market is worth US$28.7 billion this year and predicted that will rise to US$37.8 billion by 2008. The 1Gb DRAM currently represents 8% of total market share, but is expected make up 36% of all DRAM sold in 2008.

Samsung is now producing all densities of DDR2 DRAM at the 80nm node. It began producing the first 512Mb DDR2 DRAM at 80nm node since last March.

Source: Samsung Electronics

Explore further: Samsung now producing industry's first highest density mobile LPDDR2 memory, using 20nm-class technology

Related Stories

Samsung Expands Green Line-up with 40nm-class 4Gigabit DDR3

February 24, 2010

Samsung Electronics announced today that it has begun mass producing the industry’s first low-power (green) four gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology. The high-density memory is expected ...

Recommended for you

Smart home heating and cooling

August 28, 2015

Smart temperature-control devices—such as thermostats that learn and adjust to pre-programmed temperatures—are poised to increase comfort and save energy in homes.

Smallest 3-D camera offers brain surgery innovation

August 28, 2015

To operate on the brain, doctors need to see fine details on a small scale. A tiny camera that could produce 3-D images from inside the brain would help surgeons see more intricacies of the tissue they are handling and lead ...

Team creates functional ultrathin solar cells

August 27, 2015

(Phys.org)—A team of researchers with Johannes Kepler University Linz in Austria has developed an ultrathin solar cell for use in lightweight and flexible applications. In their paper published in the journal Nature Materials, ...

Interactive tool lifts veil on the cost of nuclear energy

August 24, 2015

Despite the ever-changing landscape of energy economics, subject to the influence of new technologies and geopolitics, a new tool promises to root discussions about the cost of nuclear energy in hard evidence rather than ...

0 comments

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.