Samsung Produces 60-Nanometer 8-Gigabit NAND Flash Memory

July 19, 2006
Samsung Produces 60-Nanometer 8-Gigabit NAND Flash Memory

Samsung Electronics today announced that it has begun mass producing an 8-Gigabit (Gb) NAND flash memory device, providing a much larger and more affordable storage density for consumer and mobile applications such as mobile phones, MP3 players and gaming consoles. The high-density MLC (multi-level-cell) memory is being produced with 60-nanometer process technology - the smallest used today.

Samsung's 8Gb NAND flash memory, developed in September 2004, is the fifth consecutive NAND flash memory to follow the New Memory Growth Model of double density growth every 12 months, a pattern conceived by Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics Semiconductor Business.

Mass production of the new 8Gb chip allows Samsung to offer an 8-Gigabyte (GB) solution by vertically stacking two 4GB packages, each package carrying a vertical stack of four 8Gb dies. The 8GB NAND which can store 2000 MP3 files or 225 minutes of DVD-quality video is expected to be available in the third quarter of 2006.

Samsung plans to further utilize its 8-Gb NAND flash memory chip in Samsung's high-density MLC NAND, called moviNAND, to produce a 2GB-level NAND market solution. The recently introduced moviNAND combines NAND flash memory and a NAND controller and can be embedded in mobile handsets to accommodate the high data storage requirements that accompany the increasing number of multimedia features on mobile phones.

The newest technology advancement brings 25 percent higher manufacturing productivity over the previous 70nm design technology. It follows the introduction of 80-nm production process technology for DDR2 DRAM a little more than a year ago (March 2005).

Source: Samsung Electronics

Explore further: Intel and Micron memory chip tuned to data driven age

Related Stories

WALDIO mode to improve smartphone life explained at USENIX

July 11, 2015

Researchers from South Korea's Hanyang University and the Ulsan National Institute of Science and Technology (UNIST) have got together to resolve the journaling of journal anomaly in the Android IO stack. Translation: They ...

Samsung offers new ePoP memory for smartphones

February 6, 2015

(Phys.org) —High-end smartphones to come, if they could talk, would deliver a message to Samsung, relaying thanks for the memory. Samsung Electronics has announced they are mass-producing an "embedded package on package" ...

Toshiba launches 19nm process NAND flash memory

April 21, 2011

(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...

Recommended for you

Interactive tool lifts veil on the cost of nuclear energy

August 24, 2015

Despite the ever-changing landscape of energy economics, subject to the influence of new technologies and geopolitics, a new tool promises to root discussions about the cost of nuclear energy in hard evidence rather than ...

Smart home heating and cooling

August 28, 2015

Smart temperature-control devices—such as thermostats that learn and adjust to pre-programmed temperatures—are poised to increase comfort and save energy in homes.

0 comments

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.