Infineon unveils low-noise SiGeC transistor

September 2, 2005

Germany's Infineon Technologies unveiled a silicon-germanium-carbon (SiGeC) process technology for high-performance radio-frequency semiconductor devices.

The transistors are intended for a range of radio and wireless applications above 10 gigahertz, such as amplifiers for wireless devices that include satellite radios, WiMax and global positioning systems.

Known as Heterojunction Bipolar Transistors, the devices provide low-noise parameters of 0.75 decibels at 6 GHz with high gain up to 19 dB at 6 GHz.

"These new HBTs give RF designers a dramatic boost in performance, while retaining the desirable features of low cost and manufacturability inherent in devices using traditional SMT packages," said Infineon spokesman Michael Mauer.

The company added that the SiGeC process enabled development of a novel approach to address parasitic grounding and also significantly cut base resistance levels.

Copyright 2005 by United Press International

Related Stories

Recommended for you

NASA's space-station resupply missions to relaunch

November 29, 2015

NASA's commercial space program returns to flight this week as one of its private cargo haulers, Orbital ATK, is to launch its first supply shipment to the International Space Station in more than 13 months.

CERN collides heavy nuclei at new record high energy

November 25, 2015

The world's most powerful accelerator, the 27 km long Large Hadron Collider (LHC) operating at CERN in Geneva established collisions between lead nuclei, this morning, at the highest energies ever. The LHC has been colliding ...


Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.