Infineon unveils low-noise SiGeC transistor

September 2, 2005

Germany's Infineon Technologies unveiled a silicon-germanium-carbon (SiGeC) process technology for high-performance radio-frequency semiconductor devices.

The transistors are intended for a range of radio and wireless applications above 10 gigahertz, such as amplifiers for wireless devices that include satellite radios, WiMax and global positioning systems.

Known as Heterojunction Bipolar Transistors, the devices provide low-noise parameters of 0.75 decibels at 6 GHz with high gain up to 19 dB at 6 GHz.

"These new HBTs give RF designers a dramatic boost in performance, while retaining the desirable features of low cost and manufacturability inherent in devices using traditional SMT packages," said Infineon spokesman Michael Mauer.

The company added that the SiGeC process enabled development of a novel approach to address parasitic grounding and also significantly cut base resistance levels.

Copyright 2005 by United Press International

Related Stories

Recommended for you

Perfectly accurate clocks turn out to be impossible

October 7, 2015

Can the passage of time be measured precisely, always and everywhere? The answer will upset many watchmakers. A team of physicists from the universities of Warsaw and Nottingham have just shown that when we are dealing with ...

The topolariton, a new half-matter, half-light particle

October 7, 2015

A new type of "quasiparticle" theorized by Caltech's Gil Refael, a professor of theoretical physics and condensed matter theory, could help improve the efficiency of a wide range of photonic devices—technologies, such as ...


Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.