High Voltage DTMOS Power MOSFET Using A Super Junction Structure To Reduce Power Consumption

March 29, 2005

Continuing its leadership role in developing innovative power semiconductors, Toshiba America Electronic Components, Inc. (TAEC) and its parent Toshiba Corp. announced a new power MOSFET called DTMOS, that employs a new super junction structure that enables a reduction in power consumption caused by on-state resistance (RDSON) to approximately 40 percent of the value typically achieved with conventional MOSFETs. Developed by Toshiba, the first device in the DTMOS family, TK15A60S, is targeted for use in power supplies in television sets, home appliances, AC adapters and ballast lighting. Toshiba began shipping samples of the new MOSFET today, and will begin production in April 2005.

The super junction structure, which has vertical paths to allow electrical current to flow through easily on a silicon substrate, realizes lower RDSON than the theoretical limit of silicon. By applying this super junction structure and optimizing the total device, the RDSON for the same area in Toshiba's DTMOS device achieves a 60 percent reduction and its gate charge (Qg) achieves a 40 percent reduction compared with Toshiba's conventional MOSFETs. Consequently, RDSON * Qg, a characteristic that is one important performance index for MOSFETs (in which smaller is better), is one-fourth the value of the company's conventional MOSFETs.

With this announcement, Toshiba is combining a super junction structure with the company's original Deep Trench MOSFET (DTMOS) technology. This is the first in the market using super junction structure combined with deep trench technology.

The first device in the family, designated TK15A60S , features maximum ratings of 15 Amp (A) and 600 volt (V) with on resistance of 0.3 Ohm and will begin sampling in March 2005.

"We're very pleased to introduce the first member of our DTMOS product line, targeted at achieving significant reductions in power consumption in the mainstream switch mode power supply and ballast lighting markets with a 600V, 15A device," said Brach Cox, business development manager, power devices, in Toshiba's Discrete Business Unit.

Background of the Development

Recently, reduction of power consumption and miniaturization of consumer electronics have been in strong demand, and consequently, lower RDSON in power MOSFETs has been a target to improve their power efficiency. In order to respond to the demand for lower power consumption, Toshiba is commercializing a new product utilizing DTMOS technology which can improve efficiency of power supplies. Toshiba succeeded in the development of DTMOS because of its broad repertoire of power MOSFET devices and development expertise and device technology.

Features

-- Due to the super junction structure, RDS ON reaches 0.3 Ohm (maximum).
-- At this time, Toshiba is the first to utilize a super junction structure with deep trench technology on a silicon substrate.
-- The device uses a TO-220SIS package, which is widely used in the market, and enables conventional products to be replaced easily.

Explore further: CEO of Japan's Toshiba resigns over doctored books

Related Stories

CEO of Japan's Toshiba resigns over doctored books

July 21, 2015

Toshiba's CEO and eight other executives resigned Tuesday to take responsibility for doctored books that inflated profits at the Japanese technology manufacturer by 152 billion yen ($1.2 billion) over several years.

Qi wireless charging standard offers more design freedom

August 1, 2014

Wireless charging is getting a new technology treatment which offers more design freedom. The Wireless Power Consortium's advance in its Qi wireless charging standard means that phones and chargers will no longer need to ...

Probing Fukushima with cosmic rays should speed cleanup

June 18, 2014

A Los Alamos technique called muon tomography can safely peer inside the cores of the Fukushima Daiichi reactors and create high-resolution images of the damaged nuclear material inside without ever breaching the cores themselves. ...

New innovation enhances information storage in electronics

December 30, 2013

A team of researchers from the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering has developed a new Magnetoresistive Random Access Memory (MRAM) technology ...

Recommended for you

How bees naturally vaccinate their babies

July 31, 2015

When it comes to vaccinating their babies, bees don't have a choice—they naturally immunize their offspring against specific diseases found in their environments. And now for the first time, scientists have discovered how ...

Image: Hubble sees a dying star's final moments

July 31, 2015

A dying star's final moments are captured in this image from the NASA/ESA Hubble Space Telescope. The death throes of this star may only last mere moments on a cosmological timescale, but this star's demise is still quite ...

Exoplanets 20/20: Looking back to the future

July 31, 2015

Geoff Marcy remembers the hair standing up on the back of his neck. Paul Butler remembers being dead tired. The two men had just made history: the first confirmation of a planet orbiting another star.

Earth flyby of 'space peanut' captured in new video

July 31, 2015

NASA scientists have used two giant, Earth-based radio telescopes to bounce radar signals off a passing asteroid and produce images of the peanut-shaped body as it approached close to Earth this past weekend.

0 comments

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.