New Low Voltage Trench MOSFETs Improve Power Circuit Efficiency and Battery-Life

Jan 28, 2005

Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These devices reduce resistance between drain and source (RDS(on)) to improve overall power circuit efficiency by 30 percent in portable products when compared to similarly packaged competitive solutions.

The new devices are small signal, 20 volt (V) MOSFETs specifically designed for use in -430 milliamp (mA) to -950 mA applications such as power load switches, power supply converter circuits and the battery management of cell phones, digital cameras, PDAs, pagers, media players and portable GPS systems. Utilizing ON Semiconductor’s Trench technology, these new low voltage MOSFETS boost channel length and equivalent channel density. This enables greater current conduction which delivers 60 percent lower RDS(on) than comparably packaged MOSFETs offered today.

Comparison of RDS(on) Ranges
- ON Semiconductor Trench MOSFETs: 150 – 900 mOhms
- Competitive MOSFET Devices: 850 mOhms to 1600 mOhms

Available in three tiny (1.6 mm x 1.6 mm) low profile (0.6 mm to 1.0 mm) packages, these Trench MOSFETs conserve valuable board space. Because MOSFETs are inherently susceptible to electrostatic discharge (ESD) damage - and the smaller the package the higher the risk of ESD damage – ON Semiconductor has integrated zener diodes into the gates of their Trench MOSFET to provide superior ESD protection. Overall, these packaging, performance and integration improvements work to further simplify overall board design and free-up additional board space.

“ON Semiconductor Trench technology realizes the highest channel density in the industry and delivers the best-in-class on-resistance (Rds(on)) performance for a given package footprint,” said David Garafano, ON Semiconductor general manager of Power FET Products. “By combining this Trench technology and the company’s ultra-small packaging technology, ON Semiconductor has developed a series of low voltage MOSFETs that deliver superior RDS(on), reduce power loss and improve current conduction. As such, these devices improve overall power circuit efficiency by up to 30 percent and greatly assist our customers in improving battery efficiency in their portable products.”

The Devices

- NTA4151PT1, NTE4151PT1, NTZS3151PT1, and NTZD3152PT1 are P-Channel MOSFETs for high-side load switching of up to 850 milliamps (mA). Both single and dual modes are offered.
- NTA4153NT1, NTE4153NT1 and NTZD3154NT1: These are N-Channel MOSFETs for low side load switches up to 915 mA. Both single and dual modes are offered.
- NTZD3155CT1: This is a complementary N-Channel and P-Channel combination for integrated load switching or low current dc-to-dc conversion

Explore further: Machine-learning breakthrough paves way for medical screening, prevention and treatment

Related Stories

Architects to hatch Ecocapsule as low-energy house

12 hours ago

Where people call home depends on varied factors, from poverty level to personal philosophy to vanity to community pressure. Ecocapsule appears to be the result of special factors, a team of architects applying ...

California farmers agree to drastically cut water use

15 hours ago

California farmers who hold some of the state's strongest water rights avoided the threat of deep mandatory cuts when the state accepted their proposal to voluntarily reduce consumption by 25 percent amid ...

Apple may deliver ways to rev up the iPad, report says

16 hours ago

MacRumors last month said that the latest numbers from market research firm IDC's Worldwide Quarterly Tablet Tracker revealed Apple stayed on as the largest vendor in a declining tablet market. The iPad ...

Recommended for you

Samsung details a dual-OS phone-docking hybrid device

3 hours ago

What's this? A dual operating system hybrid device? The U.S. Patent & Trademark Office this month revealed a patent application from Samsung Electronics, titled "Electronic Apparatus, Docking Apparatus, ...

AP sources: IRS believes identity thieves from Russia

4 hours ago

IRS investigators believe the identity thieves who stole the personal tax information of more than 100,000 taxpayers from an IRS website are part of a sophisticated criminal operation based in Russia, two ...

User comments : 0

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.