TSMC Verifies Fully Functional 90 Nanometer Chips Using Immersion Lithography Tools

December 22, 2004

Findings Suggests Immersion is Nearly Ready For Production

Taiwan Semiconductor Manufacturing Company, said that it used immersion lithography tools to produce fully functional 90nm devices. The finding was presented in a keynote speech at the Cymer Lithography Symposium in Semicon Japan on December 1, predating a similar announcement.
TSMC's circuits represent the first data that immersion-based lithography systems are nearing production-ready status.

Dr. Burn J. Lin, senior director of TSMC's micropatterning division, reported in the December keynote speech that TSMC had fabricated electrically functioning 90nm SRAM chips using a 90nm-node-capable prototype immersion scanner from ASML. The wafer batch was split at ASML for both immersion and dry exposures at critical layer before metal. After developing the resist image, the wafers were sent back to TSMC to complete the fabrication steps.

Yield, device characteristics and defect levels were comparable for both dry and wet scanners. The yield-related depth of focus of the immersion scanner is almost twice that of the dry scanner.

"While some optimization may still be in order, we have promising results pointing to immersion lithography systems and tools capable of producing functional deep-submicron devices that will scale well below the 90nm node," said Dr. Lin. "The larger focal range is the most significant finding, because it suggests that immersion tools can safely image with better yield than previously anticipated. This finding can be extrapolated to infer even greater benefits at the 65nm node."

TSMC estimates that immersion lithography tools may be called upon for 65nm production and are the chosen candidates for 45nm production. TSMC began installing its first 65nm immersion lithography system in early November this year.

Explore further: Imec demonstrates first nanophotonics components on 300mm silicon photonics wafers using optical lithography

Related Stories

IMEC reports major progress in EUV

July 14, 2008

IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML’s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, using ...

IMEC advancing state-of-the-art in FinFETs

June 13, 2007

At this week’s VLSI Symposium, IMEC presents significant progress in the manufacturability, circuit performance and reliability of FinFETs. The results advance FinFET process technology towards being a candidate for the ...

Hynix joins IMEC's (sub-)32nm CMOS research platform

May 24, 2007

Hynix Semiconductor has entered into a strategic partnership with IMEC, Europe’s leading independent nanoelectronics research center, to perform research and development for the (sub)-32nm memory process generations.

Recommended for you

Study shows a way to tell if your hamster is happy

July 29, 2015

(Phys.org)—A pair of researchers at Liverpool John Moores University in the U.K. believe they have found a way to measure happiness in hamsters. In their paper published in Royal Society Open Science, Emily Bethell and ...

First detection of lithium from an exploding star

July 29, 2015

The chemical element lithium has been found for the first time in material ejected by a nova. Observations of Nova Centauri 2013 made using telescopes at ESO's La Silla Observatory, and near Santiago in Chile, help to explain ...

New names and insights at Ceres

July 29, 2015

Colorful new maps of Ceres, based on data from NASA's Dawn spacecraft, showcase a diverse topography, with height differences between crater bottoms and mountain peaks as great as 9 miles (15 kilometers).

0 comments

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.