Toshiba Develops New Technology for Advanced CMOS Fabrication

December 23, 2004

Toshiba Corporation has announced a new method for suppressing thermal instability and current leakage in MOS transistors that support advanced CMOS fabrication at 45-nanometer gate lengths and beyond. The new technology will contribute to the continued application of CMOS technology to future generations of LSI.

The conventional NiSi layer in a shallow junction is thermally unstable; subjecting the layer to heat results in large current leakage. Toshiba has developed a method to suppress this thermal instability that is based on implanting fluorine ion into the surface prior to the formation of the NiSi layer. This solution directly addresses a significant problem in the LSI manufacturing process, and offers a solution for advanced CMOS fabrication with NiSi.

The new method also offers a cost-effective solution, since implantation of fluorine ion can be done with current manufacturing equipment and produces no adverse side effects in the manufacturing process, such as sharp increase of sheet resistance.

As lower power consumption while delivering greater performance is a prerequisite for advanced MOS transistors, especially process technology at 45 nanometer and beyond, Toshiba plans to incorporate the new method into 45-nanometer LSI fabrication process.

Full details of the new technology were presented on December 15 at the IEDM 2004 in San Francisco.

Source: JCN Network

Explore further: Imec reports breakthrough work that advances path for nanoscale spin-wave majority gates

Related Stories

IBM researchers look beyond silicon technology

August 3, 2006

Scientists at the IBM Zurich Research Laboratory have demonstrated how a single molecule can be switched between two distinct conductive states, which allows it to store data.

Highly energy-efficient CMOS logic systems

February 25, 2013

Non-volatile bistable memory circuits being developed by Satoshi Sugahara and his team at Tokyo Tech pave the way for highly energy-efficient CMOS logic systems. The details are described in the February 2013 issue of Tokyo ...

Recommended for you

Khatyrka meteorite found to have third quasicrystal

December 9, 2016

(Phys.org)—A small team of researchers from the U.S. and Italy has found evidence of a naturally formed quasicrystal in a sample obtained from the Khatyrka meteorite. In their paper published in the journal Scientific Reports, ...

Japan launching 'space junk' collector

December 9, 2016

Japan will launch a cargo ship Friday bound for the International Space Station, carrying a 'space junk' collector that was made with the help of a fishnet company.

0 comments

Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.