Samsung Ships World's First 512Mb GDDR3

December 9, 2004

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, has begun shipping the world's first 512-megabit (Mb) GDDR3 memory device which is the most advanced graphics double-data-rate synchronous DRAM available for graphics card makers, as well as electronic game console manufacturers. The new Samsung device has at least twice the density of any graphics memory available today, enabling much richer textures in gaming imagery.


DRAM (Dynamic Random Access Memory)
DRAM is the most common type of memory and is "dynamic" because in order for the memory chip to retain data, it must be refreshed constantly ( a pulse of current through all of the memory cells every few milliseconds). If the cell is not refreshed, the data is lost. DRAM temporarily stores data in a cell composed of a capacitor and a transistor. Each cell contains a specified number of bits. These cells are accessed by row addresses and column addresses.


"With our new 512 megabit GDDR3 memory, we can provide sharply improved performance, reduced power consumption and more efficient space utilization for 512 megabyte graphics cards," said Mueez Deen, Director of Marketing, Graphics Memory, Samsung Semiconductor, Inc.

In November 2003, Samsung introduced 256Mb GDDR3 memory and holds the largest share of the market for graphics memory embedded in high-end graphics cards.

Market analysts predict that the 2005 graphics DRAM market will be 30 percent higher than this year's figure, reaching close to US$1.47 billion. The Samsung 512Mb GDDR3, the first JEDEC-standard GDDR3 to operate at up to 1.6Gbps, is faster than any other graphics memory on the market.

Mass production of the 512Mb GDDR3 will begin early next year.

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