Industry's first mass production of DRAM in 90nm technology

September 9, 2004
Samsung 512Mb DDR SDRAM

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, announced today the industry's first mass production of 90nanometer (nm) 512Mb DDR SDRAM on 300mm base wafers. Samsung pioneered nanometer level production technology in 2003 with production of 2Gb NAND flash memory in a 90nm process.

The 90nm 512Mb DDR SDRAM with voltage rates of 2.5V is available at both 400 and 333MHz. The new device is already being verified by leading chipset companies. The migration from 0.10micron to 90nm boosts production by 40 percent and offers higher production efficiencies at the same time.

The key to successful production in 90nm process technology are; short wave length Argon Fluoride (ArF) light source that realizes the finer circuitry, high dielectric Alumina Hafnium Oxide (AHO) applied within the capacitor to enhance data storage characteristics, and Samsung's unique three dimensional transistor circuitry, Recessed Channel Array Transistor (RCAT), implemented to reinforce the capacitors’ data retaining features enhancing the refresh cycles.

Market research firm, Gartner Dataquest, forecasts the transition of DRAM market will transition from 256Mb to 512Mb as the memory industry mainstay density in the second half of 2004, with 512Mb densities to reach $13billion in 2005.

Explore further: Samsung Begins World's First 60nm-DRAM Mass Production

Related Stories

Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM

November 14, 2005

Samsung Electronics announced that it has started to mass produce 512Mb DRAM (dynamic random access memory) for mobile products, using 90nm circuitry. This marks the first time that 512Mb mobile DRAM will be available anywhere ...

Recommended for you

Horn of Africa drying ever faster as climate warms

October 9, 2015

The Horn of Africa has become increasingly arid in sync with the global and regional warming of the last century and at a rate unprecedented in the last 2,000 years, according to new research led by a University of Arizona ...

Scientists paint quantum electronics with beams of light

October 9, 2015

A team of scientists from the University of Chicago and the Pennsylvania State University have accidentally discovered a new way of using light to draw and erase quantum-mechanical circuits in a unique class of materials ...


Please sign in to add a comment. Registration is free, and takes less than a minute. Read more

Click here to reset your password.
Sign in to get notified via email when new comments are made.