Archive: 11/09/2006

Samsung Develops 40nm 32 Gb NAND Flash

Samsung Electronics today announced that it has developed the industry’s first 40-nanometer memory device. The new 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, ...

dateSep 11, 2006 in Hardware
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Reducing Expenses, Increasing Profits

A University of Arkansas researcher studied 123 manufacturing firms -- high-tech and non-high-tech -- and found that implementation of information-technology-based supply-chain management systems has an overall positive impact ...

dateSep 11, 2006 in Other
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